| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1DI200Z-100 |
Power transistor module for power switching, AC and DC motor controls |
COLLMER SEMICONDUCTOR INC |
| 2 |
1DI200Z-120 |
Power transistor module for power switching, AC and DC motor controls |
COLLMER SEMICONDUCTOR INC |
| 3 |
1DI300Z-100 |
Power transistor module for power switching, AC and DC motor controls |
COLLMER SEMICONDUCTOR INC |
| 4 |
1DI300Z-120 |
Power transistor module for power switching, AC and DC motor controls |
COLLMER SEMICONDUCTOR INC |
| 5 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 6 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 7 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 8 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 9 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 10 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 11 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 12 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 13 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 15 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 16 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 17 |
2DI200D-100 |
Power transistor module for power switching, AC and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 18 |
2DI30Z-100 |
Power transistor module for power switching, AC and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 19 |
2DI75Z-100 |
Power transistor module for power switching, Ac and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 20 |
2DI75Z-120 |
Power transistor module for power switching, Ac and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 21 |
2N2947 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
| 22 |
2N2948 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
| 23 |
2N2949 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-107 case |
Motorola |
| 24 |
2N2950 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-102 case |
Motorola |
| 25 |
2N3055 |
NPN TRANSISTOR FOR POWERFUL AF OUTPUT STAGES |
Siemens |
| 26 |
2N3298 |
NPN silicon transistor for power oscillator applications to 150 MHz |
Motorola |
| 27 |
2N3664 |
NPN silicon transistor for power amplifier and driver applications to 500MHz |
Motorola |
| 28 |
2SA1094 |
Silicon PNP epitaxial transistor, for power amplifier applications |
TOSHIBA |
| 29 |
2SA1306B |
1.5 A; 200V; 20W; silicon PNP epitaxial type stransistor. For power amplifier applications, driver stage amplifier applications |
TOSHIBA |
| 30 |
2SC2922 |
Transistor For Power Amplifier |
Sanken |
| | | |
