No. |
Part Name |
Description |
Manufacturer |
1 |
2N3553 |
Silicon NPN planar epitaxial transistor for transmitter applications at 175 MHz with 28 V supply voltage |
VALVO |
2 |
2N3924 |
Silicon NPN planar epitaxial transistor for transmitter applications up to 175 MHz at 13.5 V supply voltage |
VALVO |
3 |
4066 |
QUAD BILATERAL SWITCH FOR TRANSMISSION OR MULTIPLEXING OF ANALOG OR DIGITAL SIGNALS |
SGS Thomson Microelectronics |
4 |
56-218 |
Fastening kit for transistors with TO-5 and TO-39 housings with an all-metal base |
VALVO |
5 |
56-245 |
Spacer disc made of insulating material, for transistors with housing TO-5, TO-12, TO-33, TO-39 |
VALVO |
6 |
56-246 |
Spacer disc made of insulating material, for transistors with housing TO-18, TO-72 |
VALVO |
7 |
56-263 |
Cooling clamp for transistors with housing TO-18, TO-72 |
VALVO |
8 |
56-265 |
Cooling clamps for transistors with housing TO-5, 10-12, TO-33, TO-39 |
VALVO |
9 |
56-289 |
Cooling clamps for transistors with housing TO-5, 10-12, TO-33, TO-39 |
VALVO |
10 |
ACCESSORIES |
Accessories for transistors |
COMPELEC |
11 |
ACCESSORIES |
Mica discs, insulated bushings clamping plate, cooling clamps, mounting kit for transistors 56218, spacer washers 56245 56246 |
VALVO |
12 |
ACCESSORIES FOR TRANSISTORS |
Cooling Clips, Mounting Accessories, general explanatory notes, mechanical data, thermal characteristics |
Mullard |
13 |
AN6410 |
Low Frequency Amplfier for Transmission Modulation Circuit |
Panasonic |
14 |
B120_B |
20V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
15 |
B130_B |
30V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
16 |
B140_B |
40V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
17 |
B150_B |
50V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
18 |
B160_B |
60V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
19 |
B220_A |
20V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
20 |
B230_A |
30V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
21 |
B240_A |
40V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
22 |
B250_A |
50V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
23 |
B260_A |
60V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
24 |
B320_A_B |
20V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
25 |
B330_A_B |
30V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
26 |
B340_A_B |
40V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
27 |
B350_A_B |
50V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
28 |
B360_A_B |
60V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
29 |
BFW46 |
Silicon NPN planar epitaxial transistor for transmitter applications up to 175 MHz at 13.5 V supply voltage |
VALVO |
30 |
BFW47 |
Silicon NPN planar epitaxial transistor for transmitter applications at 175 MHz with 28 V supply voltage |
VALVO |
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