No. |
Part Name |
Description |
Manufacturer |
1 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
2 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
3 |
2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
4 |
2223-14 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
5 |
2N1711 |
Silicon NPN planar switching transistor with high current gain |
AEG-TELEFUNKEN |
6 |
2N2483 |
NPN Transistor General Purpose, low noise, low level amplifier, high current gain |
Amelco Semiconductor |
7 |
2N2484 |
NPN Transistor General Purpose, low noise, low level amplifier, high current gain |
Amelco Semiconductor |
8 |
2N2484A |
NPN Transistor General Purpose, low noise, low level amplifier, high current gain |
Amelco Semiconductor |
9 |
2N2586 |
NPN Transistor General Purpose, low noise, high current gain, low leakage |
Amelco Semiconductor |
10 |
2N2604 |
PNP silicon annular transistor, low level, low noise, high gain |
Motorola |
11 |
2N2605 |
PNP silicon annular transistor, low level, low noise, high gain |
Motorola |
12 |
2N2639 |
DUAL NPN Transistor General Purpose, closely matched current gain |
Amelco Semiconductor |
13 |
2N2640 |
DUAL NPN Transistor General Purpose, closely matched current gain |
Amelco Semiconductor |
14 |
2N2641 |
DUAL NPN Transistor General Purpose, closely matched current gain |
Amelco Semiconductor |
15 |
2N2642 |
DUAL NPN Transistor General Purpose, closely matched current gain |
Amelco Semiconductor |
16 |
2N2643 |
DUAL NPN Transistor General Purpose, closely matched current gain |
Amelco Semiconductor |
17 |
2N2644 |
DUAL NPN Transistor General Purpose, closely matched current gain |
Amelco Semiconductor |
18 |
2N2708 |
NPN transistor RF/IF Amplifier, high power gain, low capacitance |
Amelco Semiconductor |
19 |
2N3279 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
20 |
2N3280 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
21 |
2N3281 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
22 |
2N3282 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
23 |
2N3810DCSM |
DUAL HIGH GAIN PNP TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
24 |
2N3962 |
Silicon PNP low power transistor with high gain at low level |
ICCE |
25 |
2N3963 |
Silicon PNP low power transistor with high gain at low level |
ICCE |
26 |
2N3964 |
Silicon PNP low power transistor with high gain at low level |
ICCE |
27 |
2N4416 |
Wideband, High Gain, Single, N- Channel JFET |
Linear Systems |
28 |
2N4416A |
Wideband, High Gain, Single, N- Channel JFET |
Linear Systems |
29 |
2N5090 |
NPN silicon RF Power Transistor, 1.2W Output Minimum at 400MHz (7.8 dB Gain) |
Motorola |
30 |
2N5564 |
Matched High Gain |
Vishay |
| | | |