No. |
Part Name |
Description |
Manufacturer |
1 |
ADF7242 |
Low Power IEEE 802.15.4/Proprietary GFSK/FSK Zero-IF 2.4 GHz Transceiver IC |
Analog Devices |
2 |
AGF10321 |
1-axis accelerometer GF1 |
Panasonic |
3 |
AGF10331 |
1-axis accelerometer GF1 |
Panasonic |
4 |
AGF10711 |
1-axis accelerometer GF1 |
Panasonic |
5 |
AGF10721 |
1-axis accelerometer GF1 |
Panasonic |
6 |
AGF10731 |
1-axis accelerometer GF1 |
Panasonic |
7 |
AGF11311 |
1-axis accelerometer GF1 |
Panasonic |
8 |
BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
9 |
BF1005R |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB |
Infineon |
10 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
11 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
12 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
13 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
14 |
BF2030 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
15 |
BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
16 |
BF2030W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
17 |
BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
18 |
BF2040R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
19 |
BF2040W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
20 |
BF543 |
RF-MOSFET - VDS=15V, gfs=12mS, Gp=22dB, F=1dB |
Infineon |
21 |
BF998 |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
22 |
BF998R |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
23 |
BF999 |
RF-MOSFET - VDS=15V, gfs=16mS, Gp=25dB, F=1dB |
Infineon |
24 |
BT168 |
Thyristors logic level for RCD/ GFI/ LCCB applications |
Philips |
25 |
BT168B |
Thyristors logic level for RCD/ GFI/ LCCB applications |
Philips |
26 |
BT168BW |
Thyristors logic level for RCD/ GFI/ LCCB applications |
Philips |
27 |
BT168D |
Thyristors logic level for RCD/ GFI/ LCCB applications |
Philips |
28 |
BT168DW |
Thyristors logic level for RCD/ GFI/ LCCB applications |
Philips |
29 |
BT168EW |
Thyristors logic level for RCD/ GFI/ LCCB applications |
Philips |
30 |
BT168W |
Thyristors logic level for RCD/ GFI/ LCCB applications |
Philips |
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