| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ADF7242 |
Low Power IEEE 802.15.4/Proprietary GFSK/FSK Zero-IF 2.4 GHz Transceiver IC |
Analog Devices |
| 2 |
AGF10321 |
1-axis accelerometer GF1 |
Panasonic |
| 3 |
AGF10331 |
1-axis accelerometer GF1 |
Panasonic |
| 4 |
AGF10711 |
1-axis accelerometer GF1 |
Panasonic |
| 5 |
AGF10721 |
1-axis accelerometer GF1 |
Panasonic |
| 6 |
AGF10731 |
1-axis accelerometer GF1 |
Panasonic |
| 7 |
AGF11311 |
1-axis accelerometer GF1 |
Panasonic |
| 8 |
BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 9 |
BF1005R |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB |
Infineon |
| 10 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
| 11 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 12 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 13 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 14 |
BF2030 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 15 |
BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 16 |
BF2030W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 17 |
BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 18 |
BF2040R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 19 |
BF2040W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 20 |
BF543 |
RF-MOSFET - VDS=15V, gfs=12mS, Gp=22dB, F=1dB |
Infineon |
| 21 |
BF998 |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
| 22 |
BF998R |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
| 23 |
BF999 |
RF-MOSFET - VDS=15V, gfs=16mS, Gp=25dB, F=1dB |
Infineon |
| 24 |
BT168 |
Thyristors logic level for RCD/ GFI/ LCCB applications |
Philips |
| 25 |
BT168B |
Thyristors logic level for RCD/ GFI/ LCCB applications |
Philips |
| 26 |
BT168BW |
Thyristors logic level for RCD/ GFI/ LCCB applications |
Philips |
| 27 |
BT168D |
Thyristors logic level for RCD/ GFI/ LCCB applications |
Philips |
| 28 |
BT168DW |
Thyristors logic level for RCD/ GFI/ LCCB applications |
Philips |
| 29 |
BT168EW |
Thyristors logic level for RCD/ GFI/ LCCB applications |
Philips |
| 30 |
BT168W |
Thyristors logic level for RCD/ GFI/ LCCB applications |
Philips |
| | | |
