No. |
Part Name |
Description |
Manufacturer |
1 |
BC107A |
Si-PLANAR-npn TRANSISTOR h21E=β=90 >40 |
IPRS Baneasa |
2 |
BC107B |
Si-PLANAR-npn TRANSISTOR h21E=β=150 >65 |
IPRS Baneasa |
3 |
BC108A |
Si-PLANAR-npn TRANSISTOR h21E=β=90 >40 |
IPRS Baneasa |
4 |
BC108C |
Si-PLANAR-npn TRANSISTOR h21E=β=270 >100 |
IPRS Baneasa |
5 |
BC109C |
Si-PLANAR-npn TRANSISTOR h21E=β=270 >100 |
IPRS Baneasa |
6 |
BC170A |
Si-PLANAR-npn TRANSISTOR h21E=β=30...100 at 1mA |
IPRS Baneasa |
7 |
BC170B |
Si-PLANAR-npn TRANSISTOR h21E=β=60...250 at 1mA |
IPRS Baneasa |
8 |
BC170C |
Si-PLANAR-npn TRANSISTOR h21E=β=150...600 at 1mA |
IPRS Baneasa |
9 |
BC171A |
Si-PLANAR-npn TRANSISTOR h21E=β=90 >40 |
IPRS Baneasa |
10 |
BC172A |
Si-PLANAR-npn TRANSISTOR h21E=β=90 >40 |
IPRS Baneasa |
11 |
BC172C |
Si-PLANAR-npn TRANSISTOR h21E=β=270 >100 |
IPRS Baneasa |
12 |
BC173A |
Si-PLANAR-npn TRANSISTOR h21E=β=90 >40 |
IPRS Baneasa |
13 |
BC173C |
Si-PLANAR-npn TRANSISTOR h21E=β=270 >100 |
IPRS Baneasa |
14 |
BC174B |
Si-PLANAR-npn TRANSISTOR h21E=β=150 >65 |
IPRS Baneasa |
15 |
BC177A |
Si-PLANAR EPITAXIAL-pnp TRANSISTOR h21E=β=90 >40 |
IPRS Baneasa |
16 |
BC177B |
Si-PLANAR EPITAXIAL-pnp TRANSISTOR h21E=β=150 >65 |
IPRS Baneasa |
17 |
BC178A |
Si-PLANAR EPITAXIAL-pnp TRANSISTOR h21E=β=90 >40 |
IPRS Baneasa |
18 |
BC179A |
Si-PLANAR EPITAXIAL-pnp TRANSISTOR h21E=β=90 >40 |
IPRS Baneasa |
19 |
BC307A |
Si-PLANAR EPITAXIAL-pnp TRANSISTOR h21E=β=90 >40 |
IPRS Baneasa |
20 |
BC308A |
Si-PLANAR EPITAXIAL-pnp TRANSISTOR h21E=β=90 >40 |
IPRS Baneasa |
21 |
BC309B |
Si-PLANAR EPITAXIAL-pnp TRANSISTOR h21E=β=150 >65 |
IPRS Baneasa |
22 |
BC309C |
Si-PLANAR EPITAXIAL-pnp TRANSISTOR h21E=β=250 >100 |
IPRS Baneasa |
23 |
BCW70 |
Low frequency transistor, code on case H2 |
mble |
24 |
BCW70 |
Silicon PNP Transistor, marking H2, SOT-23 case |
Motorola |
25 |
DS_CELSIUS_H210 |
CELSIUS H210 Workstation power in notebook format |
Fujitsu Microelectronics |
26 |
H23L1 |
Matched Emitter-Detector Pair H23L1 |
General Electric Solid State |
27 |
H24B1 |
THE H24B SERIES CONSISTS OF A GALLIUM ARSENIDE INFRARED EMITTING DIODE COUPLED WITH A SILICON PHOTOTRANSISTOR |
QT Optoelectronics |
28 |
H24B2 |
THE H24B SERIES CONSISTS OF A GALLIUM ARSENIDE INFRARED EMITTING DIODE COUPLED WITH A SILICON PHOTOTRANSISTOR |
QT Optoelectronics |
29 |
LMP91002 |
Configurable AFE for Low Power H2S and CO Sensing Applications |
Texas Instruments |
30 |
LMP91002SD/NOPB |
Configurable AFE for Low Power H2S and CO Sensing Applications 14-WSON |
Texas Instruments |
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