No. |
Part Name |
Description |
Manufacturer |
1 |
1224-10 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
SGS Thomson Microelectronics |
2 |
1224-10 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS |
ST Microelectronics |
3 |
1N3879 |
Diffused silicon junction rectifier designed for HF range 6A 50V |
Texas Instruments |
4 |
1N3879R |
Diffused silicon junction rectifier designed for HF range 6A 50V, reverse polarity |
Texas Instruments |
5 |
1N3880 |
Diffused silicon junction rectifier designed for HF range 6A 100V |
Texas Instruments |
6 |
1N3880R |
Diffused silicon junction rectifier designed for HF range 6A 100V, reverse polarity |
Texas Instruments |
7 |
1N3881 |
Diffused silicon junction rectifier designed for HF range 6A 200V |
Texas Instruments |
8 |
1N3881R |
Diffused silicon junction rectifier designed for HF range 6A 200V, reverse polarity |
Texas Instruments |
9 |
1N3882 |
Diffused silicon junction rectifier designed for HF range 6A 300V |
Texas Instruments |
10 |
1N3882R |
Diffused silicon junction rectifier designed for HF range 6A 300V, reverse polarity |
Texas Instruments |
11 |
1N3883 |
Diffused silicon junction rectifier designed for HF range 6A 400V |
Texas Instruments |
12 |
1N3883R |
Diffused silicon junction rectifier designed for HF range 6A 400V, reverse polarity |
Texas Instruments |
13 |
1N3889 |
Diffused silicon junction rectifier designed for HF range 12A 50V |
Texas Instruments |
14 |
1N3889R |
Diffused silicon junction rectifier designed for HF range 12A 50V, reverse polarity |
Texas Instruments |
15 |
1N3890 |
Diffused silicon junction rectifier designed for HF range 12A 100V |
Texas Instruments |
16 |
1N3890R |
Diffused silicon junction rectifier designed for HF range 12A 100V, reverse polarity |
Texas Instruments |
17 |
1N3891 |
Diffused silicon junction rectifier designed for HF range 12A 200V |
Texas Instruments |
18 |
1N3891R |
Diffused silicon junction rectifier designed for HF range 12A 200V, reverse polarity |
Texas Instruments |
19 |
1N3892 |
Diffused silicon junction rectifier designed for HF range 12A 300V |
Texas Instruments |
20 |
1N3892R |
Diffused silicon junction rectifier designed for HF range 12A 300V, reverse polarity |
Texas Instruments |
21 |
1N3893 |
Diffused silicon junction rectifier designed for HF range 12A 400V |
Texas Instruments |
22 |
1N3893R |
Diffused silicon junction rectifier designed for HF range 12A 400V, reverse polarity |
Texas Instruments |
23 |
2N1613 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
24 |
2N1613 |
Silicon NPN Planar HF and Switching Transistor |
TELEFUNKEN |
25 |
2N1711 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
26 |
2N1893 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
27 |
2N1893 |
Silicon NPN Planar HF and Switching Transistor |
TELEFUNKEN |
28 |
2N2102 |
1.000W RF NPN Metal Can Transistor. 65V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
29 |
2N2193 |
Silicon NPN Planar-Epitaxial HF and Switching Transistor |
TELEFUNKEN |
30 |
2N2218 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
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