| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SJ125 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 2 |
2SJ498 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 3 |
2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 4 |
2SK433 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss. |
Isahaya Electronics Corporation |
| 5 |
2SK492 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 6 |
NE25339 |
General purpose dual-gate GaAs MESFET. IDSS range 10-80 mA. |
NEC |
| 7 |
NE25339-T1 |
General purpose dual-gate GaAs MESFET. IDSS range 10-80 mA. |
NEC |
| 8 |
NE32400M |
Ultra low noise pseudomorphic HJ FET. IDSS range 45-70 mA. |
NEC |
| 9 |
NE32500M |
C to KA band super low noise amplifier. N-channel HJ FET chip. Idss selection 50 to 90 mA. |
NEC |
| 10 |
NE32500N |
C to KA band super low noise amplifier. N-channel HJ FET chip. Idss selection 20 to 60 mA. |
NEC |
| 11 |
NE34018-T1-63 |
GaAs HJ-FET L to S band low noise amplifier. Idss range 30-65 mA. |
NEC |
| 12 |
NE34018-T1-64 |
GaAs HJ-FET L to S band low noise amplifier. Idss range 60-120 mA. |
NEC |
| 13 |
NE38018-T1-67 |
GaAs HJ-FET L to S band low noise amplifier. Idss range 40-90 mA. |
NEC |
| 14 |
NE38018-T1-68 |
GaAs HJ-FET L to S band low noise amplifier. Idss range 70-170 mA. |
NEC |
| 15 |
NE67400 |
L to Ku band low noise amplifier N-channel GaAs MESFET. Idss 20 to 120 mA. |
NEC |
| 16 |
NE67483B |
L to Ku band low noise amplifier N-channel GaAs MESFET. Idss 20 to 120 mA. |
NEC |
| 17 |
NE76100M |
General purpose GaAs MESFET. IDSS 60 to 100 mA. |
NEC |
| 18 |
NE76100N |
General purpose GaAs MESFET. IDSS 30 to 60 mA. |
NEC |
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