| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 2 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 3 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
| 4 |
1536-3 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 5 |
1536-8 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 6 |
1N4150 |
500 mW Axial Switching Diode, 50.0V Vr, 0.100uA Ir, 1.00V Vf @ 200mA If |
Continental Device India Limited |
| 7 |
1N4151 |
500 mW Axial Switching Diode, 50.0V Vr, 0.100uA Ir, 1.00V Vf @ 50mA If |
Continental Device India Limited |
| 8 |
1N914 |
500 mW Axial Switching Diode, 75.0V Vr, 5.000uA Ir, 1.00V Vf @ 10mA If |
Continental Device India Limited |
| 9 |
1N914B |
500 mW Axial Switching Diode, 20.0V Vr, 0.030uA Ir, 1.00V Vf @ 100mA If |
Continental Device India Limited |
| 10 |
2N3283 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 11 |
2N3284 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 12 |
2N3285 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 13 |
2N3286 |
PNP germanium epitaxial mesa transistor for TV, RF and IF amplifier, oscillator and general purpose applications |
Motorola |
| 14 |
2N3291 |
NPN silicon transistor for TV and FM mixer, RF and IF amplifier |
Motorola |
| 15 |
2N3292 |
NPN silicon transistor for TV and FM mixer, RF and IF amplifier |
Motorola |
| 16 |
2N3293 |
NPN silicon transistor for TV and FM mixer, RF and IF amplifier |
Motorola |
| 17 |
2N3294 |
NPN silicon transistor for TV and FM mixer, RF and IF amplifier |
Motorola |
| 18 |
2N3323 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
| 19 |
2N3323 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
| 20 |
2N3324 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
| 21 |
2N3324 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
| 22 |
2N3325 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
| 23 |
2N3325 |
PNP germanium transistor for FM RF, IF, mixer and oscillator and AM RF, IF and converter applications |
Motorola |
| 24 |
2SA1815 |
PNP Epitaxial Planar Silicon Transistor FM, RF, MIX, IF Amplifier, High-Frequency General-Purpose Amplifier Applications |
SANYO |
| 25 |
2SA1857 |
PNP Epitaxial Planar Silicon Transistor FM, RF, MIX, IF Amplifier High-Frequency General-Purpose Amplifier Applications |
SANYO |
| 26 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 27 |
2SC1187 |
TV 1ST 2ND PICTURE IF AMPLIFIER |
USHA India LTD |
| 28 |
2SC1623R |
NPN silicon epitaxial transistor, audio frequency and 455kHz IF amplifier |
NEC |
| 29 |
2SC184 |
Transistors AM FREQUENCY CONVERTER IF AMPLIFIER |
USHA India LTD |
| 30 |
2SC1923 |
Transistor Silicon NPN Epitaxial Planar Type (PCT process) High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications |
TOSHIBA |
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