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Datasheets for IN S

Datasheets found :: 5670
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No. Part Name Description Manufacturer
1 1837 2.3GHz 2W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit SGS Thomson Microelectronics
2 1838 2.3GHz 3W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit SGS Thomson Microelectronics
3 1PS76SB21 Schottky barrier diodes in small packages Nexperia
4 1PS76SB21 Schottky barrier diodes in small packages NXP Semiconductors
5 1S752H Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source Hitachi Semiconductor
6 1S753H Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source Hitachi Semiconductor
7 1S754H Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source Hitachi Semiconductor
8 1S755H Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source Hitachi Semiconductor
9 1S756H Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source Hitachi Semiconductor
10 1S757H Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
11 1S758H Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
12 1S759H Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
13 1S760H Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source Hitachi Semiconductor
14 1S761H Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
15 1S762H Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
16 1S763H Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
17 1S764H Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
18 1S765H Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source Hitachi Semiconductor
19 2DA1201Y 120V PNP SILICON TRANSISTOR IN SOT89 Diodes
20 2DA1201Y-7 120V PNP SILICON TRANSISTOR IN SOT89 Diodes
21 2DA1201YQTC 120V PNP SILICON TRANSISTOR IN SOT89 Diodes
22 2DA1971 400V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89 Diodes
23 2DA1971-13 400V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89 Diodes
24 2DA1971-7 400V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89 Diodes
25 2N5431 Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits Motorola
26 2SA350 Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier Hitachi Semiconductor
27 2SA351 Germanium PNP Transistor Drift Junction, intended for use in SW Oscillator, Frequency Converter Hitachi Semiconductor
28 2SA352 Germanium PNP Transistor Drift Junction, intended for use in SW Mixer Hitachi Semiconductor
29 2SC5179 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NEC
30 2SC5179-T1 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION NEC


Datasheets found :: 5670
Page: | 1 | 2 | 3 | 4 | 5 |



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