| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1S2090 |
Silicon Epitaxial Planar Diode, intended for use in UHF/VHF TV Tuner AFC |
Hitachi Semiconductor |
| 2 |
1S750 |
Silicon Point Contact Epitaxial, intended for use in UHF Tuner Mixer |
Hitachi Semiconductor |
| 3 |
2SC313 |
Silicon NPN Epitaxial Planar Transistor, intended for use in UHF Tuner Local Oscillator |
Hitachi Semiconductor |
| 4 |
2SC313H |
Silicon NPN Epitaxial Planar Transistor, intended for use in UHF Tuner Local Oscillator |
Hitachi Semiconductor |
| 5 |
2SC5181 |
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 6 |
2SC5181-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 7 |
2SC5186 |
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 8 |
2SC5186-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 9 |
2SC684 |
Silicon NPN Epitaxial Planar Transistor, intended for use in UHF Tuner Local Oscillator |
Hitachi Semiconductor |
| 10 |
2SC707 |
Silicon NPN Planar Transistor, intended for use in UHF TV RF Amplifier |
Hitachi Semiconductor |
| 11 |
2SC707H |
Silicon NPN Planar Transistor, intended for use in UHF BAND RF Amplifier |
Hitachi Semiconductor |
| 12 |
AF239 |
PNP germanium high-frequency transistor designed in UHF/RF amplifier and autodyne converter applications |
Motorola |
| 13 |
APPLICATION NOTE 1022 |
Mechanical and thermal considerations in using RF linear hybrid amplifiers |
Motorola |
| 14 |
BAR63-02V |
PIN Diodes - High-Speed switching diode in ultra-small SC79 Package |
Infineon |
| 15 |
BAR64-02V |
PIN Diodes - RF Switch (High isolation) in ultra-small SC79 Package |
Infineon |
| 16 |
BAR65-02V |
PIN Diodes - Low Loss, Low Capacitance Switch in ultra small SC79 package |
Infineon |
| 17 |
BAR67-02V |
PIN Diodes - Low Loss Switch in ultra_small SC79 Package |
Infineon |
| 18 |
BAT54CV |
Two Schottky barrier double diodes in ultra small SOT666 package |
Philips |
| 19 |
BAT54CV |
BAT54CV; Two Schottky barrier double diodes in ultra small SOT666 package |
Philips |
| 20 |
BAT54VV |
Schottky barrier triple diode in ultra small SOT666 package |
Nexperia |
| 21 |
BAT54VV |
Schottky barrier triple diode in ultra small SOT666 package |
NXP Semiconductors |
| 22 |
BAT54VV |
BAT54VV; Schottky barrier triple diode in ultra small SOT666 package |
Philips |
| 23 |
BAT54VV |
Schottky barrier triple diode in ultra small SOT666 package |
Philips |
| 24 |
BBY53-02V |
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package |
Infineon |
| 25 |
BBY55-02V |
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package |
Infineon |
| 26 |
BBY57-02V |
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package |
Infineon |
| 27 |
BBY58-02V |
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package |
Infineon |
| 28 |
BF569 |
PNP Silicon RF Transistor (fOR OSCILLATORS, MIXERS AND SELF-OSCILLATING MIXER STAGES IN uhf tv TUNERS) |
Siemens |
| 29 |
BF569W |
PNP Silicon RF Transistor (For oscillators, mixer and self-oscillating mixer stages in UHF TV-tuner) |
Siemens |
| 30 |
BF679 |
Epitaxial planar PNP transistor, intended to be used in UHF-VHF range up to 900MHz |
SGS-ATES |
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