| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1893 |
1.65GHz 10W 28V NPN Silicon RF Transistor designed for MARISAT Applications |
SGS Thomson Microelectronics |
| 2 |
1N3063 |
Extremely fast glass passivated silicon switching diode, marking plain text or color rings yellow-orange-black-green |
Texas Instruments |
| 3 |
1N3604 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-brown or plain text |
Texas Instruments |
| 4 |
1N3606 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-orange or plain text |
Texas Instruments |
| 5 |
1N4009 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-yellow or plain text |
Texas Instruments |
| 6 |
1N4151 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-brown or plain text |
Texas Instruments |
| 7 |
1N4153 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-orange or plain text |
Texas Instruments |
| 8 |
1N4154 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-yellow or plain text |
Texas Instruments |
| 9 |
1N4305 |
Extremely fast glass passivated silicon switching diode, marking plain text or color rings yellow-orange-black-green |
Texas Instruments |
| 10 |
1N459 |
Glass passivated silicon switching diode with high breaking voltage, marking using plain text or color rings yellow-green-white |
Texas Instruments |
| 11 |
1SS239 |
Silicon epitaxial schottky barrier type diode, marking S1 |
TOSHIBA |
| 12 |
1SS241 |
Silicon Epitaxial Planar Type Diode, marking TY |
TOSHIBA |
| 13 |
1SS242 |
Silicon Epitaxial Schottky Barrier Type Diode for UHF band mixer applications, marking S2 |
TOSHIBA |
| 14 |
1SS371 |
Silicon epitaxial planar type diode for VHF tuner band switch applications, marking TY |
TOSHIBA |
| 15 |
1SV153A |
Silicon epitaxial planar type variable capacitance diode, marking T5 |
TOSHIBA |
| 16 |
1SV161 |
Silicon Epitaxial planar type variable capacitance diode, marking T2 |
TOSHIBA |
| 17 |
1SV186 |
Silicon Epitaxial planar type variable capacitance diode, marking T3 |
TOSHIBA |
| 18 |
1SV204 |
Silicon Epitaxial planar type variable capacitance diode, marking T4 |
TOSHIBA |
| 19 |
1SV211 |
Silicon Epitaxial planar type variable capacitance diode for CATV tuning, marking T6 |
TOSHIBA |
| 20 |
1SV212 |
Silicon Epitaxial planar type variable capacitance diode for VCO for UHF band radio, marking T8 |
TOSHIBA |
| 21 |
1SV224 |
Silicon Epitaxial planar type variable capacitance diode, marking T7 |
TOSHIBA |
| 22 |
1SV226 |
Silicon Epitaxial planar type variable capacitance diode, marking TA |
TOSHIBA |
| 23 |
1SV227 |
Silicon Epitaxial planar type variable capacitance diode for CATV tuning, marking T9 |
TOSHIBA |
| 24 |
1SV238 |
Silicon Epitaxial planar type variable capacitance diode, marking TB |
TOSHIBA |
| 25 |
1SV254 |
Silicon Epitaxial planar type variable capacitance diode for TV tuning, marking T1 |
TOSHIBA |
| 26 |
1SV255 |
Silicon Epitaxial planar type variable capacitance diode, marking T2 |
TOSHIBA |
| 27 |
1SV256 |
Silicon Epitaxial planar type variable capacitance diode, marking T4 |
TOSHIBA |
| 28 |
1SV258 |
Silicon Epitaxial planar type variable capacitance diode, case 1-1F1A, marking T7 |
TOSHIBA |
| 29 |
1SV259 |
Silicon Epitaxial planar type variable capacitance diode, marking T9 |
TOSHIBA |
| 30 |
1SV260 |
Silicon Epitaxial planar type variable capacitance diode, marking TC |
TOSHIBA |
| | | |
