| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BU426A |
Transistor polarity NPN Voltage Vce sat max 3 V Voltage Vceo 400 V Current Ic @ Vce sat 4 A Time fall @ Ic 0.75 ?s Current Ic av. 6 A Power Ptot 70 W Voltage Vces 900 V |
SGS Thomson Microelectronics |
| 2 |
ISL84514 |
Analog Switch, SPST, Single, NOpen, Ron = 20 @ 3.3V, 12 @ 5V and 8 @ 12V, Ron Flatness Max 3�, Single Supply, +2.4V to +12V |
Intersil |
| 3 |
ISL84515 |
Analog Switch, SPST, Single, NClosed, Ron = 20 @ 3.3V, 12 @ 5V and 8 @ 12V, Ron Flatness Max 3�, Single Supply, +2.4V to +12V |
Intersil |
| 4 |
ISL84516 |
Analog Switch, SPST, Single, NOpen, Ron = 13 @ �5V, Ron Flatness Max 3Ω, �1.5V to �6V Supply |
Intersil |
| 5 |
ISL84517 |
Analog Switch, SPST, Single, NClosed, Ron = 13 @ �5V, Ron Flatness Max 3Ω, �1.5V to �6V Supply |
Intersil |
| 6 |
MJ802 |
hfe min 25 Transistor polarity NPN Current Ic continuous max 30 A Voltage Vceo 90 V Current Ic (hfe) 7.5 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
| 7 |
NDH8436 |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 5.8 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V |
Fairchild Semiconductor |
| 8 |
NDH853N |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.6 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V |
Fairchild Semiconductor |
| 9 |
NDH854P |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity P Channel Current Id cont. 5.1 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V |
Fairchild Semiconductor |
| 10 |
T2300A |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 100 V. |
General Electric Solid State |
| 11 |
T2300B |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 200 V. |
General Electric Solid State |
| 12 |
T2300D |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 400 V. |
General Electric Solid State |
| 13 |
T2300F |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 50 V. |
General Electric Solid State |
| 14 |
T2300M |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 600 V. |
General Electric Solid State |
| 15 |
T2300N |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 800 V. |
General Electric Solid State |
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