| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SD1410 |
Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications, hFE=2000 min. |
TOSHIBA |
| 2 |
BCW29R |
µ min. P-N-P Silicon Planar Epitaxial Transistor |
Mullard |
| 3 |
BCW30R |
µ min. P-N-P Silicon Planar Epitaxial Transistor |
Mullard |
| 4 |
BCW31R |
µ min. N-P-N Silicon Planar Epitaxial Transistor |
Mullard |
| 5 |
BCW32R |
µ min. N-P-N Silicon Planar Epitaxial Transistor |
Mullard |
| 6 |
BCW33R |
µ min. N-P-N Silicon Planar Epitaxial Transistor |
Mullard |
| 7 |
BCW69R |
µ min. P-N-P Silicon Planar Epitaxial Transistor |
Mullard |
| 8 |
BCW70R |
µ min. P-N-P Silicon Planar Epitaxial Transistor |
Mullard |
| 9 |
BCW71R |
µ min. N-P-N Silicon Planar Epitaxial Transistor |
Mullard |
| 10 |
BCW72R |
µ min. N-P-N Silicon Planar Epitaxial Transistor |
Mullard |
| 11 |
BCX17 |
µ min. P-N-P Silicon Planar Epitaxial Transistor |
Mullard |
| 12 |
BCX18 |
µ min. P-N-P Silicon Planar Epitaxial Transistor |
Mullard |
| 13 |
BCX19 |
µ min. N-P-N Silicon Planar Epitaxial Transistor |
Mullard |
| 14 |
BCX20 |
µ min. N-P-N Silicon Planar Epitaxial Transistor |
Mullard |
| 15 |
LY252 |
Photocoupler. High repetitive peak off-state voltage 400 V min. 1500 Vrms Input/output isolation. |
Letex Technology |
| 16 |
MC-7831 |
870 MHz GaAs CATV push-pull amplifier, gain 18 dB min. |
NEC |
| 17 |
MC-7832 |
870 MHz GaAs CATV push-pull amplifier, gain 22 dB min. |
NEC |
| 18 |
MC-7833 |
870 MHz GaAs CATV push-pull amplifier, gain 25 dB min. |
NEC |
| 19 |
NTE1317 |
Integrated Circuit Module, 2 Power, 2 Channel, AF Power Amplifier, 50W Min. |
NTE Electronics |
| 20 |
STK1030 |
3OW min. AF Power Amplifier Output Stage (D.P.P.) |
etc |
| 21 |
STK2155 |
V(cc): +-59V; 7A; 2 channel 50W min. AF power amplifier autput stage (DPP) |
SANYO |
| 22 |
STK465 |
30W min. 2-channel AF power amplifier (2 power supplies) |
SANYO |
| 23 |
T10C110BF |
T10C series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 1uA @ Vrm = 100V,max. Vbr = 110V,min @ 1uA, Holding carrent Ih = 120mA,th min. |
Littelfuse |
| 24 |
T10C110EF |
T10C series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 1uA @ Vrm = 100V,max. Vbr = 110V,min @ 1uA, Holding carrent Ih = 180mA,th min. |
Littelfuse |
| 25 |
T10C140BF |
T10C series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 1uA @ Vrm = 120V,max. Vbr = 140V,min @ 1uA, Holding carrent Ih = 120mA,th min. |
Littelfuse |
| 26 |
T10C140EF |
T10C series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 1uA @ Vrm = 120V,max. Vbr = 140V,min @ 1uA, Holding carrent Ih = 180mA,th min. |
Littelfuse |
| 27 |
T10C180BF |
T10C series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 1uA @ Vrm = 170V,max. Vbr = 180V,min @ 1uA, Holding carrent Ih = 120mA,th min. |
Littelfuse |
| 28 |
T10C180EF |
T10C series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 1uA @ Vrm = 170V,max. Vbr = 180V,min @ 1uA, Holding carrent Ih = 180mA,th min. |
Littelfuse |
| 29 |
T10C220BF |
T10C series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 1uA @ Vrm = 200V,max. Vbr = 220V,min @ 1uA, Holding carrent Ih = 120mA,th min. |
Littelfuse |
| 30 |
T10C220EF |
T10C series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 1uA @ Vrm = 200V,max. Vbr = 220V,min @ 1uA, Holding carrent Ih = 180mA,th min. |
Littelfuse |
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