| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0105-125 |
500MHz 28V 100W NPN RF power transistor for wideband VHF-UHF class C applications |
SGS Thomson Microelectronics |
| 2 |
0405-100 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W |
SGS Thomson Microelectronics |
| 3 |
0405-30 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W |
SGS Thomson Microelectronics |
| 4 |
101NU70 |
Low frequency NPN Germanium Transistor |
Tesla Elektronicke |
| 5 |
101NU71 |
Low frequency NPN Germanium Transistor |
Tesla Elektronicke |
| 6 |
102NU70 |
Low frequency NPN Germanium Transistor |
Tesla Elektronicke |
| 7 |
102NU71 |
Low frequency NPN Germanium Transistor |
Tesla Elektronicke |
| 8 |
103NU70 |
Low frequency NPN Germanium Transistor |
Tesla Elektronicke |
| 9 |
103NU71 |
Low frequency NPN Germanium Transistor |
Tesla Elektronicke |
| 10 |
104NU70 |
Low frequency NPN Germanium Transistor |
Tesla Elektronicke |
| 11 |
104NU71 |
Low frequency NPN Germanium Transistor |
Tesla Elektronicke |
| 12 |
105NU70 |
Low frequency NPN Germanium Transistor |
Tesla Elektronicke |
| 13 |
106NU70 |
Low frequency NPN Germanium Transistor |
Tesla Elektronicke |
| 14 |
107NU70 |
Low frequency NPN Germanium Transistor |
Tesla Elektronicke |
| 15 |
1132-5 |
450-512MHz CLASS C 12.5V 0.6W NPN transistor for mobile applications |
SGS Thomson Microelectronics |
| 16 |
13003BR |
TRIPLE DIFFUSED NPN TRANSISTOR(SWITCHING REGULATOR, HIGH VOLTAGE AND HIGH SPEED SWITCHING) |
Korea Electronics (KEC) |
| 17 |
13003BR |
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS |
Motorola |
| 18 |
1318 |
Silicon NPN epitaxial planer type(For low-frequency driver amplification) |
Panasonic |
| 19 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 20 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 21 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 22 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 23 |
1417-12 |
1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 24 |
1417-25 |
1.4-1.7GHz 25W 24V NPN RF transistor for microwave applications |
SGS Thomson Microelectronics |
| 25 |
1496-3 |
24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz |
SGS Thomson Microelectronics |
| 26 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
| 27 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 28 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 29 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
| 30 |
152NU70 |
High-Frequency NPN Transistor |
Tesla Elektronicke |
| | | |
