No. |
Part Name |
Description |
Manufacturer |
1 |
1N4148 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
2 |
1N4150 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
3 |
1N4151 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
4 |
1N4154 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
5 |
1N4448 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
6 |
1N4454 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
7 |
1N914 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
8 |
2SA750 |
PNP silicon transistor designed for use in AF low noise amplifier of high-class STEREOSET, RADIO and TAPERECORDER |
NEC |
9 |
2SC2352 |
Typical application of 2SC2352 to VHF Tuner mixer circuit of high conversion Gain - application note |
NEC |
10 |
ADM232A |
Part of a family of high speed RS-232 line drivers/receivers offering transmission rates up to 200 kB/s |
Analog Devices |
11 |
AGB3302 |
The AGB3302 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... |
Anadigics Inc |
12 |
AGB3303 |
The AGB3303 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... |
Anadigics Inc |
13 |
AGB3306 |
The AGB3306 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... |
Anadigics Inc |
14 |
AGB3307 |
The AGB3307 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... |
Anadigics Inc |
15 |
AN1059 |
DESIGN EQUATIONS OF HIGH-POWER-FACTOR FLYBACK CONVERTERS BASED ON THE L6561 |
SGS Thomson Microelectronics |
16 |
APPLICATION-NOTE |
Typical application of 2SC2352 to VHF Tuner mixer circuit of high conversion Gain - application note |
NEC |
17 |
APT10043 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
18 |
APT10M07 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
19 |
APT10M25 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
20 |
APT1201R6 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
21 |
APT20M22 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
22 |
APT30M85 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
23 |
APT5014 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
24 |
APT5015 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
25 |
APT5017 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
26 |
APT5020 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
27 |
APT5027 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs |
Advanced Power Technology |
28 |
APT50M50 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
29 |
APT50M80 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
30 |
APT6015 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
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