No. |
Part Name |
Description |
Manufacturer |
1 |
0603YC103KAT |
9.9-11.2Gb/s Optical Modulator Driver |
TriQuint Semiconductor |
2 |
0608-020 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz |
SGS Thomson Microelectronics |
3 |
0608-070 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics |
SGS Thomson Microelectronics |
4 |
0802YC106KAT |
9.9-11.2Gb/s Optical Modulator Driver |
TriQuint Semiconductor |
5 |
103-1 |
Application Note - Flash Analog to Digital Converters Optimizing Performance |
Comlinear Corporation |
6 |
10785A |
10785A Optics Height Adjuster and Post |
Agilent (Hewlett-Packard) |
7 |
13LED20M-ST |
Typical optical and electrical characteristics. |
Anadigics Inc |
8 |
13LED20M-TO |
Typical optical and electrical characteristics. |
Anadigics Inc |
9 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
10 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
11 |
1474 |
Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz |
SGS Thomson Microelectronics |
12 |
15LED20M-ST |
Typical optical and electrical characteristics. |
Anadigics Inc |
13 |
15LED20M-TO |
Typical optical and electrical characteristics. |
Anadigics Inc |
14 |
163CNQ060 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
15 |
163CNQ080 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
16 |
163CNQ090 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
17 |
163CNQ100 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
18 |
1T339 |
CD Optical Pickup Photodiode |
SONY |
19 |
24C01SC |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24LC01SC Instead The 24C01SC is a 1K bit Electrically Erasable PROM with bondpad positions optimized for smart card specific ap |
Microchip |
20 |
24C02SC |
The 24C02SC is a 2K bit Electrically Erasable PROM with bondpad positions optimized for smart card specific applications. The 24C02SC is organized as a single block of 256 x 8-bit memory with an I2C compatible 2-wire seria |
Microchip |
21 |
293D |
Solid Tantalum Chip Capacitors, Molded, Standard EIA Case Sizings and Ratings, TANTAMOUNT®, Commercial, Surface Mount, Automatic Pick & Place Compatible, Optical Character Recognition Qualified |
Vishay |
22 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
23 |
2N3553 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
24 |
2N3632 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
25 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
26 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
27 |
2N3926 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
28 |
2N3927 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
29 |
2N3961 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
30 |
310B |
SINGLE-CHANNEL AUDIO |
Fiber Options |
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