| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N105 |
Silicon Microwave Switch BV=500V, PD=8.0W |
Motorola |
| 2 |
2N1049 |
Silicon NPN Transistor PD=40W |
Motorola |
| 3 |
2N1049A |
Silicon NPN Transistor PD=40W |
Motorola |
| 4 |
2N1049B |
Silicon NPN Transistor PD=40W |
Motorola |
| 5 |
2N1049C |
Silicon NPN Transistor PD=40W |
Motorola |
| 6 |
2N1050 |
Silicon NPN Transistor PD=40W |
Motorola |
| 7 |
2N1050A |
Silicon NPN Transistor PD=40W |
Motorola |
| 8 |
2N1050B |
Silicon NPN Transistor PD=40W |
Motorola |
| 9 |
2N1050C |
Silicon NPN Transistor PD=40W |
Motorola |
| 10 |
2N3055 |
High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. |
USHA India LTD |
| 11 |
2N3773 |
High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. |
USHA India LTD |
| 12 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 13 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 14 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
| 15 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
| 16 |
2SC2233 |
NPN silicon plastic power transistor. Designed for use in B/W TV horizontal deflection output. Vcbo =200V, DC current gain: 20 @ Ic = 4A. Pd = 40W. |
USHA India LTD |
| 17 |
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W. |
USHA India LTD |
| 18 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
| 19 |
2SK3560 |
Silicon N-channel power MOSFET For PDP/For high-speed switching |
Panasonic |
| 20 |
78M6618-PDU-1 |
78M6618 PDU1 Evaluation Board |
MAXIM - Dallas Semiconductor |
| 21 |
ACT4751 |
40 V, 4.0 A CC/CV Step-Down DC/DC Converter with USB PD 3.0 PPS |
Qorvo |
| 22 |
ADAU7002 |
Stereo PDM to I2S or TDM Conversion IC |
Analog Devices |
| 23 |
AK4538 |
Low-power codec for portables, PDA |
AKM |
| 24 |
AN32502A |
For Information�Communication - PDA |
Panasonic |
| 25 |
BA6852 |
Spindle and loading motor driver for PD |
ROHM |
| 26 |
BA6852FP |
Spindle and loading motor driver for PD |
ROHM |
| 27 |
BD241A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 28 |
BD241B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 29 |
BD241C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 30 |
BD242A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
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