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Datasheets for PERIO

Datasheets found :: 1102
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 ADM691 �P Supervisor with Backup Battery Switchover, 50 ms Nominal Adjustable Reset Period, Adjustable Watchdog Period, Chip Enable Signals, 4.65V Threshold Voltage, Watchdog, Backup Battery and Low Vcc Status O/Ps and 100mA Output Current Analog Devices
2 ADM691 �P Supervisor with Backup Battery Switchover, 50 ms Nominal Adjustable Reset Period, Adjustable Watchdog Period, Chip Enable Signals, 4.65V Threshold Voltage, Watchdog, Backup Battery and Low Vcc Status O/Ps and 100mA Output Current Analog Devices
3 ADM691A �P Supervisor with Backup Battery Switchover, Adjustable Reset and Watchdog Periods, Chip Enable Signals, 4.65V Threshold Voltage, Watchdog, Battery Backup and Low Vcc Status O/Ps and 250mA Output Current Analog Devices
4 ADM695 �P Supervisor with Backup Battery Switchover, Adjustable Reset Period Analog Devices
5 ADM800 �P Supervisor , Adjustable Reset and Watchdog Periods Analog Devices
6 ADM8695 �P Supervisor with Backup Battery Switchover, 200ms Nominal Adjustable Reset Period, Adjustable Watchdog Period, Chip Enable Signals, 4.65V Threshold Voltage, Watchdog, Backup Battery and Low Vcc Status O/Ps. Upgrade for ADM695 Analog Devices
7 ADM8695 �P Supervisor with Backup Battery Switchover, 200ms Nominal Adjustable Reset Period, Adjustable Watchdog Period, Chip Enable Signals, 4.65V Threshold Voltage, Watchdog, Backup Battery and Low Vcc Status O/Ps. Upgrade for ADM695 Analog Devices
8 ADM8695ARW-REEL µP Supervisor with Backup Battery Switchover, 200ms Nominal Adjustable Reset Period, Adjustable Watchdog Period, Chip Enable ... Analog Devices
9 ADM8695ARW-REEL µP Supervisor with Backup Battery Switchover, 200ms Nominal Adjustable Reset Period, Adjustable Watchdog Period, Chip Enable ... Analog Devices
10 AN1012 PREDICTING THE BATTERY LIFE AND DATA RETENTION PERIOD OF NVRAMS SGS Thomson Microelectronics
11 AN1216 IMPLEMENTING A PERIODIC ALARM WITH TIMEKEEPER SGS Thomson Microelectronics
12 AN1254 HOW TO MEASURE THE PERIOD OF AN EXTERNAL SIGNAL WITH ST52X420 SGS Thomson Microelectronics
13 KM416C1004CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms Samsung Electronic
14 KM416C1004CJ-5 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms Samsung Electronic
15 KM416C1004CJ-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms Samsung Electronic
16 KM416C1204CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms Samsung Electronic
17 KM416C1204CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms Samsung Electronic
18 KM416C1204CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms Samsung Electronic
19 KM416C1204CT-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms Samsung Electronic
20 KM416C1204CT-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms Samsung Electronic
21 KM416C254DJ-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period Samsung Electronic
22 KM416C254DJ-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period Samsung Electronic
23 KM416C254DJ-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period Samsung Electronic
24 KM416C254DT-5 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period Samsung Electronic
25 KM416C254DT-6 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period Samsung Electronic
26 KM416C254DT-7 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period Samsung Electronic
27 KM416V1004CJ-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms Samsung Electronic
28 KM416V1004CJ-50 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms Samsung Electronic
29 KM416V1004CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms Samsung Electronic
30 KM416V1004CT-45 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms Samsung Electronic


Datasheets found :: 1102
Page: | 1 | 2 | 3 | 4 | 5 |



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