No. |
Part Name |
Description |
Manufacturer |
1 |
151911207-001 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
2 |
151911207-002 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
3 |
152911207-001 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
4 |
210007039-002 |
350mWAudio Power Amplifier with Shutdown Mode |
Chengdu Sino Microelectronics System |
5 |
2AD149 |
Application Note - Power amplifier |
COMPELEC |
6 |
2B940A |
Silicon PNP epitaxial planar type(For power amplification) |
Panasonic |
7 |
2N1039 |
Germanium transistor, medium power amplification |
COSEM |
8 |
2N1040 |
Germanium transistor, medium power amplification |
COSEM |
9 |
2N1041 |
Germanium transistor, medium power amplification |
COSEM |
10 |
2N1561 |
Medium Power Amplifiers and Switches |
Micro Electronics |
11 |
2N1561 |
PNP germanium mesa transistor for VHF power amplifier applications |
Motorola |
12 |
2N1562 |
PNP germanium mesa transistor for VHF power amplifier applications |
Motorola |
13 |
2N1692 |
PNP germanium mesa transistor for VHF power amplifier applications |
Motorola |
14 |
2N1693 |
PNP germanium mesa transistor for VHF power amplifier applications |
Motorola |
15 |
2N176 |
PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications |
Motorola |
16 |
2N1906 |
Germanium Diffused Collector PNP, typical application High Power Amplifier |
SGS-ATES |
17 |
2N2102 |
SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
18 |
2N2947 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
19 |
2N2948 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
20 |
2N2949 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-107 case |
Motorola |
21 |
2N2950 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-102 case |
Motorola |
22 |
2N3019 |
NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
23 |
2N3020 |
NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
24 |
2N3021 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
25 |
2N3022 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
26 |
2N3023 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
27 |
2N3024 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
28 |
2N3025 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
29 |
2N3026 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
30 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
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