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Datasheets for POWER HI

Datasheets found :: 259
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 2N3714 80V Silicon NPN power high transistor MOSPEC Semiconductor
2 2N3715 60V Silicon NPN power high transistor MOSPEC Semiconductor
3 2N4240 NPN TRANSISTOR MEDIUM POWER HIGH VOLTAGE SemeLAB
4 2N6653 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
5 2N6653/1 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
6 2N6653/2 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
7 2N6653/3 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
8 2N6653/4 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
9 2N6653A Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
10 2N6653B Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
11 2N6654 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
12 2N6654/1 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
13 2N6654/2 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
14 2N6654/3 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
15 2N6654/4 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
16 2N6654A Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
17 2N6654B Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
18 2N6655/1 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
19 2N6655/2 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
20 2N6655/3 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
21 2N6655/4 Silicon NPN High Power High Voltage Switching Transistor IPRS Baneasa
22 2SA1007 Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications NEC
23 2SA1007A Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications NEC
24 2SC2337 Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications NEC
25 2SC2337A Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications NEC
26 2SD1087 Silicon NPN triple diffused darlington power high current switching transistor TOSHIBA
27 2SD1360 Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications TOSHIBA
28 2SD1361 Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications TOSHIBA
29 2SD1409 Silicon NPN triple diffused darlington power high voltage switching transistor TOSHIBA
30 2SD1410 Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications, hFE=2000 min. TOSHIBA


Datasheets found :: 259
Page: | 1 | 2 | 3 | 4 | 5 |



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