No. |
Part Name |
Description |
Manufacturer |
1 |
2N3714 |
80V Silicon NPN power high transistor |
MOSPEC Semiconductor |
2 |
2N3715 |
60V Silicon NPN power high transistor |
MOSPEC Semiconductor |
3 |
2N4240 |
NPN TRANSISTOR MEDIUM POWER HIGH VOLTAGE |
SemeLAB |
4 |
2N6653 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
5 |
2N6653/1 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
6 |
2N6653/2 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
7 |
2N6653/3 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
8 |
2N6653/4 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
9 |
2N6653A |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
10 |
2N6653B |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
11 |
2N6654 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
12 |
2N6654/1 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
13 |
2N6654/2 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
14 |
2N6654/3 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
15 |
2N6654/4 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
16 |
2N6654A |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
17 |
2N6654B |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
18 |
2N6655/1 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
19 |
2N6655/2 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
20 |
2N6655/3 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
21 |
2N6655/4 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
22 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
23 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
24 |
2SC2337 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
25 |
2SC2337A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
26 |
2SD1087 |
Silicon NPN triple diffused darlington power high current switching transistor |
TOSHIBA |
27 |
2SD1360 |
Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications |
TOSHIBA |
28 |
2SD1361 |
Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications |
TOSHIBA |
29 |
2SD1409 |
Silicon NPN triple diffused darlington power high voltage switching transistor |
TOSHIBA |
30 |
2SD1410 |
Silicon NPN triple diffused darlington power high voltage switching transistor, igniter applications, hFE=2000 min. |
TOSHIBA |
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