| No. |
Part Name |
Description |
Manufacturer |
| 1 |
11016 |
Isolated Resistor Termination Network |
California Micro Devices Corp |
| 2 |
1401 |
Bulk Metal Foil Technology, 3 Pin Transistor Outline Hermetic Resistor Network |
Vishay |
| 3 |
1403 |
Bulk Metal Foil Technology, 4 Pin Transistor Outline Hermetic Resistor Network, Smallest Available Miniature Hermetically-Sealed Network |
Vishay |
| 4 |
1413 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Ideal for Uncomplicated Networks |
Vishay |
| 5 |
1417 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Alternative Layout to Model 1413 |
Vishay |
| 6 |
1419 |
Bulk Metal Foil Technology, 10 Pin Transistor Outline Hermetic Resistor Network, Largest R Capacity of the Smaller TO Series |
Vishay |
| 7 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 8 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
| 9 |
1442 |
Bulk Metal Foil Technology, Dual-In-Line Hermetic Resistor Networks |
Vishay |
| 10 |
1445 |
Bulk Metal Foil Technology, Dual-In-Line Hermetic Resistor Networks |
Vishay |
| 11 |
1446 |
Bulk Metal Foil Technology, Dual-In-Line Hermetic Resistor Networks |
Vishay |
| 12 |
1457 |
Bulk Metal Foil Technology, 18 Pin Dual-In-Line Hermetic Resistor Network |
Vishay |
| 13 |
1460 |
Bulk Metal Foil Technology, 20 Pin Dual-In-Line Hermetic Resistor Network |
Vishay |
| 14 |
1461 |
Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks |
Vishay |
| 15 |
1463 |
Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks |
Vishay |
| 16 |
1464 |
Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks |
Vishay |
| 17 |
1466 |
Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks |
Vishay |
| 18 |
1989-XX |
Tanfilm DIP Resistor Networks |
International Resistive |
| 19 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 20 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 21 |
2SC2337 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 22 |
2SC2337A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 23 |
300144 |
2 or 4 Resistors |
Vishay |
| 24 |
300145 |
2 or 4 Resistors |
Vishay |
| 25 |
300190-9 |
Bulk Metal Foil Technology Molded Resistor Networks |
Vishay |
| 26 |
300190-9 , 300210-12 (2R, 3R, 4R) |
2 Resistors through X Resistors |
Vishay |
| 27 |
300190-9 , 300210-12 (2R, 3R, 4R) |
2 Resistors through X Resistors |
Vishay |
| 28 |
300210-12 |
Bulk Metal Foil Technology Molded Resistor Networks |
Vishay |
| 29 |
308A |
Commercial Discrete Wirewound Resistors |
Vishay |
| 30 |
4302H |
4302H-5V, 4302H-12V Series Intergrated Resistor-5 Volts and 12 Volts Operation T-1 3/4 (5mm) |
etc |
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