| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0105-125 |
500MHz 28V 100W NPN RF power transistor for wideband VHF-UHF class C applications |
SGS Thomson Microelectronics |
| 2 |
08090 |
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
Infineon |
| 3 |
0912-350 |
Avionics power RF transistor |
SGS Thomson Microelectronics |
| 4 |
1120-XXXX |
High Current RF Chokes |
JW Miller |
| 5 |
1417-25 |
1.4-1.7GHz 25W 24V NPN RF transistor for microwave applications |
SGS Thomson Microelectronics |
| 6 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 7 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 8 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
| 9 |
1536-3 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 10 |
1536-8 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 11 |
1893 |
1.65GHz 10W 28V NPN Silicon RF Transistor designed for MARISAT Applications |
SGS Thomson Microelectronics |
| 12 |
1N21 |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
| 13 |
1N21A |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
| 14 |
1N21B |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
| 15 |
1N21BM |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
| 16 |
1N21C |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
| 17 |
1N21D |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
| 18 |
1N21E |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
| 19 |
1N21F |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
| 20 |
1N21FM |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
| 21 |
1N21G |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
| 22 |
1N21RF |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
| 23 |
1N21WE |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
| 24 |
1N21WG |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
| 25 |
1N3481 |
Germanium RF Power Switch: Pi(max)=10mW, f=9,000 MHz |
Motorola |
| 26 |
1N3482 |
Germanium RF Power Switch: Pi(max)=10mW, f=9,000 MHz |
Motorola |
| 27 |
1N415B |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
| 28 |
1N415C |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
| 29 |
1N415D |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
| 30 |
1N415E |
Diode RF Mixer PN Mixer |
New Jersey Semiconductor |
| | | |
