| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SA15 |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 2 |
2SA235 |
Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 3 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 4 |
2SC1009 |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 5 |
2SC1009A |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 6 |
2SC1009R |
NPN silicon epitaxial transistor, FM/AM RF amplifier, mixer, oscillator, converter |
NEC |
| 7 |
2SC151H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 8 |
2SC152H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 9 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
| 10 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
| 11 |
2SC4179 |
FM/AM RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 12 |
2SC460 |
Silicon NPN Planar Transistor, intended for use in AM RF Amplifier, Frequency Converter, FM IF Amplifier |
Hitachi Semiconductor |
| 13 |
2SC461 |
Silicon NPN Planar Transistor, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 14 |
2SC535 |
Silicon NPN Epitaxial Planar Transistor, intended for use in FM RF Amplifier, Frequency Converter, Local Oscillator |
Hitachi Semiconductor |
| 15 |
2SC717 |
Silicon NPN Epitaxial Planar Transistor, intended for use in VHF RF Amplifier, Mixer, Oscillator |
Hitachi Semiconductor |
| 16 |
2SC717 |
VHF RF AMPLIFIER, MIXER, OSCILLATOR |
Unknow |
| 17 |
ATA12001 |
AGC transimpedence amplifier suitable for SONET OC-24 receiver, low noise RF amplifier, BISDN and HIPPI applications. |
Anadigics Inc |
| 18 |
MPS3693 |
NPN silicon annular transistor designed for general purpose RF amplifier, well suited for use in AM/FM receivers |
Motorola |
| 19 |
MPS3694 |
NPN silicon annular transistor designed for general purpose RF amplifier, well suited for use in AM/FM receivers |
Motorola |
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