No. |
Part Name |
Description |
Manufacturer |
1 |
08090 |
LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
Infineon |
2 |
1N3481 |
Germanium RF Power Switch: Pi(max)=10mW, f=9,000 MHz |
Motorola |
3 |
1N3482 |
Germanium RF Power Switch: Pi(max)=10mW, f=9,000 MHz |
Motorola |
4 |
23Z247SMD |
2 Watt Pulse Electrostatically Shielded, 500 mW Pulse, RF Pulse and Control Transformers |
Pulse Engineering |
5 |
2N1491 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
6 |
2N1492 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
7 |
2N1493 |
NPN triple-diffused silicon RF Power Transistor |
RCA Solid State |
8 |
2N2631 |
NPN triple-diffused planar silicon RF Power Transistor |
RCA Solid State |
9 |
2N2857 |
Double-diffused epitaxial planar silicon RF power transistor |
RCA Solid State |
10 |
2N2876 |
NPN triple-diffused planar silicon RF Power Transistor |
RCA Solid State |
11 |
2N3137 |
Epitaxial planar NPN transistor, designed for application as a Class-C, RF power amplifier |
SGS-ATES |
12 |
2N3229 |
NPN RF power transistor |
RCA Solid State |
13 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
14 |
2N3375 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
15 |
2N3553 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
16 |
2N3553 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
17 |
2N3632 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
18 |
2N3632 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
19 |
2N3635 |
1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
20 |
2N3636 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
21 |
2N3637 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
22 |
2N3733 |
10W, 400-Mc Silicon NPN Overlay RF Power Transistor |
RCA Solid State |
23 |
2N3866 |
Silicon NPN Overlay RF Power Transistor |
RCA Solid State |
24 |
2N3924 |
NPN silicon RF power transistor |
Motorola |
25 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
26 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
27 |
2N3926 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
28 |
2N3927 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
29 |
2N3948 |
NPN silicon RF power transistor, ideal for CATV applications or military and industrial equipment |
Motorola |
30 |
2N3950 |
NPN silicon RF power transistor designed for high-power RF amplifier applications |
Motorola |
| | | |