| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5152 |
Silicon planar epitaxial varactor diode for use in multipliers up to S band |
Mullard |
| 2 |
1N5153 |
Silicon planar epitaxial varactor diode for use in multipliers up to S band |
Mullard |
| 3 |
2SC4871 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier, OSC Applications |
SANYO |
| 4 |
2SC5275 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier, OSC Applications |
SANYO |
| 5 |
2SC5276 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier, OSC Applications |
SANYO |
| 6 |
2SC5277 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier, OSC Applications |
SANYO |
| 7 |
2SC5490 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier Applications |
SANYO |
| 8 |
2SC5504 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier Applications |
SANYO |
| 9 |
2SC5534 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier, OSC Applications |
SANYO |
| 10 |
2SC5540 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier and OSC Applications |
SANYO |
| 11 |
2SC5541 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier Applications |
SANYO |
| 12 |
2SC5645 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier and OSC Applications |
SANYO |
| 13 |
2SC5646 |
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier andOSC Applications |
SANYO |
| 14 |
50MT060ULS |
600V UltraFast 4-20 kHz Ls Chop S IGBT in a MTP package |
International Rectifier |
| 15 |
5962-04238 |
10W Total Output Power 28 Vin +3.3 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04238 |
International Rectifier |
| 16 |
5962-04239 |
10W Total Output Power 28 Vin +5 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04239 |
International Rectifier |
| 17 |
5962-04240 |
10W Total Output Power 28 Vin +12 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04240 |
International Rectifier |
| 18 |
5962-04241 |
10W Total Output Power 28 Vin +15 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04241 |
International Rectifier |
| 19 |
5962-04242 |
10W Total Output Power 28 Vin +/-5 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04242 |
International Rectifier |
| 20 |
5962-04243 |
10W Total Output Power 28 Vin +/-12 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04243 |
International Rectifier |
| 21 |
5962-04244 |
10W Total Output Power 28 Vin +/-15 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04244 |
International Rectifier |
| 22 |
6MBI15S-120 |
IGBT MODULE ( S series)1200V / 15A |
Fuji Electric |
| 23 |
74LVT162240 |
3.3V ABT 16-Bit Buffer/Line Driver with 25-Ohm Resistor s in TRI-STATE Outputs |
National Semiconductor |
| 24 |
880157 |
2560 MHz RF BAW Filter - S Band |
Qorvo |
| 25 |
ADC10158CIN |
10-Bit Plus Sign 4 s ADCs with 4- or 8-Channel MUX/ Track/Hold and Reference |
National Semiconductor |
| 26 |
AEY13 |
Low noise microwave amplifier in S band diode |
Mullard |
| 27 |
AEY15 |
Low noise microwave amplifier in S band diode |
Mullard |
| 28 |
AEY16 |
Low noise microwave amplifier in S band diode |
Mullard |
| 29 |
AGN200S03 |
GN-relay. Ultra-small package slim polarized relay. Coil voltage 3 V DC. 2 form C. Single side stable. Surface-mount terminal S type. Tube racking. |
Matsushita Electric Works(Nais) |
| 30 |
AGN200S03X |
GN-relay. Ultra-small package slim polarized relay. Coil voltage 3 V DC. 2 form C. Single side stable. Surface-mount terminal S type. Tape and reel packing (picked from 1/2/3/4-pin side).. |
Matsushita Electric Works(Nais) |
| | | |
