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Datasheets for S1

Datasheets found :: 29
Page: | 1 |
No. Part Name Description Manufacturer
1 1SS239 Silicon epitaxial schottky barrier type diode, marking S1 TOSHIBA
2 BBY31 Microminiature variable capacitance diode, code on case S1 mble
3 E102C/J Increases Ohmic Value (S102C & S102J) Vishay
4 IRF6706S2 A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 17 amperes optimized with low on resistance. International Rectifier
5 IRF6706S2TR1PBF A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 17 amperes optimized with low on resistance. International Rectifier
6 IRF6706S2TRPBF A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 17 amperes optimized with low on resistance. International Rectifier
7 IRF6708S2 A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 13 amperes optimized with low on resistance. International Rectifier
8 IRF6708S2TR1PBF A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 13 amperes optimized with low on resistance. International Rectifier
9 IRF6708S2TRPBF A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 13 amperes optimized with low on resistance. International Rectifier
10 IRF6709S2 A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. International Rectifier
11 IRF6709S2TR1PBF A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. International Rectifier
12 IRF6709S2TRPBF A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. International Rectifier
13 IRF6710S2 A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. International Rectifier
14 IRF6710S2TR1PBF A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. International Rectifier
15 IRF6710S2TRPBF A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. International Rectifier
16 IRF6720S2 A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 11 amperes optimized with low on resistance. International Rectifier
17 IRF6720S2TR1PBF A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 11 amperes optimized with low on resistance. International Rectifier
18 IRF6810S A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 16 amperes optimized with low on resistance. International Rectifier
19 IRF6810STR1PBF A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 16 amperes optimized with low on resistance. International Rectifier
20 IRF6810STRPBF A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 16 amperes optimized with low on resistance. International Rectifier
21 MSM9026 Emulation Board for S1207 Mosel Vitelic Corp
22 S1236 Silicon NPN triple diffused power transistor, complementary to S1237 TOSHIBA
23 S1237 Silicon PNP triple diffused power transistor, complementary to S1236 TOSHIBA
24 S1L9223B01, S1L9223B02 RF AMP & SERVO SIGNAL PROCESSOR Data Sheet Samsung Electronic
25 S1L9223B01, S1L9223B02 RF AMP & SERVO SIGNAL PROCESSOR Data Sheet Samsung Electronic
26 SBPH400-3 IEEE1394 PHY LAYER S100 S200 S400 MBIT/S ST Microelectronics
27 SG160160B GRAPHIC LCD MODULE display format: 160x160; module size: 88.8x88.8x9.4; viewing size: 62.0x62.0; dot size: 0.38x0.38; controller: S1D13305; SUNLIKE
28 SH320240A GRAPHIC LCD MODULE display format: 320x240; module size: 160(167.1)x109x11.0; viewing size: 121.0x92.0; dot size: 0.33x0.33; controller: S1D13305; SUNLIKE
29 SH320240C GRAPHIC LCD MODULE display format: 320x240; module size: 148(156)x120.2x15.2; viewing size: 120.14x92.14; dot size: 0.33x0.33; controller: S1D13305; SUNLIKE


Datasheets found :: 29
Page: | 1 |



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