No. |
Part Name |
Description |
Manufacturer |
1 |
1888-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
SGS Thomson Microelectronics |
2 |
1888-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
ST Microelectronics |
3 |
1891-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
SGS Thomson Microelectronics |
4 |
1891-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
ST Microelectronics |
5 |
1893-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS |
SGS Thomson Microelectronics |
6 |
1893-03 |
RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS |
ST Microelectronics |
7 |
1897 |
RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS |
SGS Thomson Microelectronics |
8 |
1897 |
RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS |
ST Microelectronics |
9 |
1898 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
SGS Thomson Microelectronics |
10 |
1898 |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS |
ST Microelectronics |
11 |
2N1651 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
12 |
2N1652 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
13 |
2N1653 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
14 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
15 |
2N1751 |
PNP Germanium power transistor, low saturation voltage |
Motorola |
16 |
2N2205 |
Transistor, high speed saturated switches |
SGS-ATES |
17 |
2N2218 |
Transistor, high speed saturated switches |
SGS-ATES |
18 |
2N2218A |
Transistor, high speed saturated switches |
SGS-ATES |
19 |
2N2219 |
Transistor, high speed saturated switches |
SGS-ATES |
20 |
2N2219A |
Transistor, high speed saturated switches |
SGS-ATES |
21 |
2N2221 |
Transistor, high speed saturated switches |
SGS-ATES |
22 |
2N2221A |
Transistor, high speed saturated switches |
SGS-ATES |
23 |
2N2222 |
Transistor, high speed saturated switches |
SGS-ATES |
24 |
2N2222A |
Transistor, high speed saturated switches |
SGS-ATES |
25 |
2N2242 |
NPN silicon annular transistor designed for high-speed, low-power saturated switching applications |
Motorola |
26 |
2N2285 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
27 |
2N2286 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
28 |
2N2287 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
29 |
2N2357 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
30 |
2N2358 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
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