| No. |
Part Name |
Description |
Manufacturer |
| 1 |
10776A |
10776A Straightness Accessory Kit |
Agilent (Hewlett-Packard) |
| 2 |
1B31 |
Wide Bandwidth Strain Gage Signal Conditioner |
Analog Devices |
| 3 |
1B31AN |
Wide Bandwidth Strain Gage Signal Conditioner |
Analog Devices |
| 4 |
1B31SD |
Wide Bandwidth Strain Gage Signal Conditioner |
Analog Devices |
| 5 |
24LC21A |
The 24LC21A is a 128 x 8-bit dual-mode Serial Electrically Erasable PROM designed to meet the plug-and-play requirements of today’s advanced monitors. The 24LC21A represents a simple, low-cost route to meeting the stringent standards |
Microchip |
| 6 |
24LCS21 |
The 24LCS21 is a 128 x 8-bit dual-mode Serial Electrically Erasable PROM designed to meet the plug-and-play requirements of today’s advanced monitors. The 24LCS21 represents a simple, low-cost route to meeting the stringent standards |
Microchip |
| 7 |
28F128 |
3 Volt Intel StrataFlash Memory |
Intel |
| 8 |
28F128J3A |
3 Volt Intel StrataFlash Memory |
Intel |
| 9 |
28F320J5 |
INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT |
Intel |
| 10 |
28F320J5 |
INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT |
Intel |
| 11 |
28F640J5 |
INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT |
Intel |
| 12 |
28F640J5 |
INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT |
Intel |
| 13 |
2B30 |
High Performance, Economy Strain Gage/RTD Conditioners |
Intronics |
| 14 |
2B31 |
High Performance, Economy Strain Gage/RTD Conditioners |
Intronics |
| 15 |
2N7000 |
N-CHANNEL 60V - 1.8 Ohm - 0.35A SOT23-3L - TO-92 STripFET™II MOSFET |
ST Microelectronics |
| 16 |
2N7002 |
N-CHANNEL 60V - 1.8 Ohm - 0.35A SOT23-3L - TO-92 STripFET™II MOSFET |
ST Microelectronics |
| 17 |
2SA1120 |
Silicon PNP epitaxial transistor, strobo flash and audio power amplifier applications |
TOSHIBA |
| 18 |
2SA1160 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 19 |
2SA1242 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 20 |
2SA1300 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 21 |
2SA1306B |
1.5 A; 200V; 20W; silicon PNP epitaxial type stransistor. For power amplifier applications, driver stage amplifier applications |
TOSHIBA |
| 22 |
2SA1314 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power Applications |
TOSHIBA |
| 23 |
2SA1327A |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power Amplifier Applications |
TOSHIBA |
| 24 |
2SA1357 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 25 |
2SA1430 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 26 |
2SA1431 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 27 |
2SA1802 |
Transistor Silicon PNP Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 28 |
2SA1893 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 29 |
2SA2056 |
Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications |
TOSHIBA |
| 30 |
2SA2058 |
Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications |
TOSHIBA |
| | | |
