| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FMKS-2052 |
Diodes with temperature detection |
Sanken |
| 2 |
FMKS-2102 |
Diodes with temperature detection |
Sanken |
| 3 |
FMKS-2152 |
Diodes with temperature detection |
Sanken |
| 4 |
TC07 |
The TC07 is a programmable, logic output temperature detector that operates from power supply levels as low as 2.7V. Programming is accomplished with external resistors connected from the temperature setpoint input (TSET) and the hysteresi |
Microchip |
| 5 |
TC07COA |
TC07 is a programmable, logic output temperature detector that operates from power supply levels as low as 2.7V. Programming is accomplished ... |
Microchip |
| 6 |
TC07CUA |
TC07 is a programmable, logic output temperature detector that operates from power supply levels as low as 2.7V. Programming is accomplished ... |
Microchip |
| 7 |
TC07EOA |
TC07 is a programmable, logic output temperature detector that operates from power supply levels as low as 2.7V. Programming is accomplished ... |
Microchip |
| 8 |
TC07EUA |
TC07 is a programmable, logic output temperature detector that operates from power supply levels as low as 2.7V. Programming is accomplished ... |
Microchip |
| 9 |
TC07VOA |
TC07 is a programmable, logic output temperature detector that operates from power supply levels as low as 2.7V. Programming is accomplished ... |
Microchip |
| 10 |
TC07VOA713 |
TC07 is a programmable, logic output temperature detector that operates from power supply levels as low as 2.7V. Programming is accomplished ... |
Microchip |
| 11 |
TC07VUA |
TC07 is a programmable, logic output temperature detector that operates from power supply levels as low as 2.7V. Programming is accomplished ... |
Microchip |
| 12 |
TC620 |
The TC620 and TC621 are programmable logic output temperature detectors designed for use in thermal management applications. The TC620 features an on-board temperature sensor, while the TC621 connects to an external NTC thermistor for remo |
Microchip |
| 13 |
TC621 |
The TC620 and TC621 are programmable logic output temperature detectors designed for use in thermal management applications. The TC620 features an on-board temperature sensor, while the TC621 connects to an external NTC thermistor for remo |
Microchip |
| 14 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 15 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 16 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 17 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 18 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 19 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 20 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 21 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 22 |
W6NRD0X-0000 |
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 23 |
W6NRE0X-0000 |
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 24 |
W6NXD0K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 25 |
W6NXD0KLSR-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 26 |
W6NXD3J-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 27 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 28 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 29 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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