| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2722 162 02492 |
Circulators/Isolators 1 to 2 GHz |
Philips |
| 2 |
2722 162 03591 |
Circulators/Isolators 1 to 2 GHz |
Philips |
| 3 |
2722 162 03802 |
Circulators/Isolators 1 to 2 GHz |
Philips |
| 4 |
2722 162 05331 |
Circulators/Isolators 1 to 2 GHz |
Philips |
| 5 |
2722 162 05571 |
Circulators/Isolators 1 to 2 GHz |
Philips |
| 6 |
2722 162 06701 |
Circulators/Isolators 1 to 2 GHz |
Philips |
| 7 |
778D |
778D Coaxial Dual-Directional Coupler, 100 MHz to 2 GHz |
Agilent (Hewlett-Packard) |
| 8 |
8483A |
8483A Power Sensor, 100 kHz to 2 GHz, 75 ohm |
Agilent (Hewlett-Packard) |
| 9 |
A5973D |
Up to 2 A step down switching regulator for automotive applications |
ST Microelectronics |
| 10 |
A5973D013TR |
Up to 2 A step down switching regulator for automotive applications |
ST Microelectronics |
| 11 |
A5974AD |
Up to 2 A step down switching regulator for automotive applications |
ST Microelectronics |
| 12 |
A5974ADTR |
Up to 2 A step down switching regulator for automotive applications |
ST Microelectronics |
| 13 |
ADAPTERS_BNC_SMA |
50OHM DC to 2 GHz |
Mini-Circuits |
| 14 |
ADL5387 |
30 MHz TO 2 GHz Quadrature Demodulator |
Analog Devices |
| 15 |
B5973D |
Up to 2 A step down switching regulator for automotive applications |
ST Microelectronics |
| 16 |
B5973DTR |
Up to 2 A step down switching regulator for automotive applications |
ST Microelectronics |
| 17 |
BB811 |
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz; special design for use in TV-sat indoor units) |
Siemens |
| 18 |
BB831 |
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz special design for use in TV-sat indoor units) |
Siemens |
| 19 |
BFG193 |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers |
Infineon |
| 20 |
BFG235 |
RF-Bipolar - For low-distortion broadband output amplifier stages in wireless systems up to 2 GHz |
Infineon |
| 21 |
BFP193 |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers |
Infineon |
| 22 |
BFP193W |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers |
Infineon |
| 23 |
BFQ60 |
LOW NOISE NPN SILICON MICROVAVE TRANSISTOR UP TO 2 GHz |
Siemens |
| 24 |
BFQ71 |
NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.) |
Siemens |
| 25 |
BFQ72 |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.) |
Siemens |
| 26 |
BFQ75 |
PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA.) |
Siemens |
| 27 |
BFQ76 |
PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents up to 20 mA.) |
Siemens |
| 28 |
BFQ82 |
NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.) |
Siemens |
| 29 |
BFY193 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers up to 2 GHz.) |
Siemens |
| 30 |
BFY196 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.) |
Siemens |
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