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Datasheets for TRANSISTOR

Datasheets found :: 21244
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 0105-125 500MHz 28V 100W NPN RF power transistor for wideband VHF-UHF class C applications SGS Thomson Microelectronics
2 0608-020 Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz SGS Thomson Microelectronics
3 0608-070 Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics SGS Thomson Microelectronics
4 08090 LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz Infineon
5 1002M Low level Class C transistor designed for avionics driver applications SGS Thomson Microelectronics
6 1002MP Low level Class C transistor designed for avionics driver applications SGS Thomson Microelectronics
7 1011-050 High Power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications SGS Thomson Microelectronics
8 1011-060 High power Class C transistor designed for L-Band Avionics transponder/interrogator pulsed output SGS Thomson Microelectronics
9 1011-225 High power Class C transistor designed for L-Band Avionics applications SGS Thomson Microelectronics
10 1011-350 High power Class C transistor designed for L-Band Avionics Mode-S transponder/interrogator applications SGS Thomson Microelectronics
11 108T2 NPN power transistor Triple Diffused - Fast switching SESCOSEM
12 109T2 NPN power transistor Triple Diffused - Fast switching SESCOSEM
13 1132-5 450-512MHz CLASS C 12.5V 0.6W NPN transistor for mobile applications SGS Thomson Microelectronics
14 1401 Bulk Metal Foil Technology, 3 Pin Transistor Outline Hermetic Resistor Network Vishay
15 1403 Bulk Metal Foil Technology, 4 Pin Transistor Outline Hermetic Resistor Network, Smallest Available Miniature Hermetically-Sealed Network Vishay
16 1413 Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Ideal for Uncomplicated Networks Vishay
17 1416-100 High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications SGS Thomson Microelectronics
18 1416-200 High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications SGS Thomson Microelectronics
19 1417 Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Alternative Layout to Model 1413 Vishay
20 1417-12 1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications SGS Thomson Microelectronics
21 1417-25 1.4-1.7GHz 25W 24V NPN RF transistor for microwave applications SGS Thomson Microelectronics
22 1419 Bulk Metal Foil Technology, 10 Pin Transistor Outline Hermetic Resistor Network, Largest R Capacity of the Smaller TO Series Vishay
23 1421 Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration Vishay
24 1422 Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration Vishay
25 1474 Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz SGS Thomson Microelectronics
26 1496-3 24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz SGS Thomson Microelectronics
27 1511-8 Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz SGS Thomson Microelectronics
28 1517-035 High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems SGS Thomson Microelectronics
29 1526-1 Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications SGS Thomson Microelectronics
30 1526-8 Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications SGS Thomson Microelectronics


Datasheets found :: 21244
Page: | 1 | 2 | 3 | 4 | 5 |



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