| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N1651 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
| 2 |
2N1652 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
| 3 |
2N1653 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
| 4 |
2N2285 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
| 5 |
2N2286 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
| 6 |
2N2287 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
| 7 |
2SC150T |
Silicon NPN Transistor Low Temperature Passivation, intended for use in 27MHz Transceiver Power Output |
Hitachi Semiconductor |
| 8 |
BF787 |
NPN silicon ANNULAR high-voltage amplifier transistor Low CRE |
Motorola |
| 9 |
BF788 |
NPN silicon ANNULAR high-voltage amplifier transistor Low CRE |
Motorola |
| 10 |
BF789 |
NPN silicon ANNULAR high-voltage amplifier transistor Low CRE |
Motorola |
| 11 |
BF790 |
PNP silicon ANNULAR high-voltage amplifier transistor Low CRE |
Motorola |
| 12 |
BF791 |
PNP silicon ANNULAR high-voltage amplifier transistor Low CRE |
Motorola |
| 13 |
BF792 |
PNP silicon ANNULAR high-voltage amplifier transistor Low CRE |
Motorola |
| 14 |
NTE13 |
Silicon NPN Transistor Low Voltage Output Amp |
NTE Electronics |
| 15 |
NTE16006 |
Silicon NPN Transistor Low Frequency Output Amp w/High Current Gain |
NTE Electronics |
| 16 |
NTE199 |
Silicon NPN Transistor Low Noise, High Gain Amplifier |
NTE Electronics |
| 17 |
NTE234 |
Silicon PNP Transistor Low Noise, High Gain Amplifier |
NTE Electronics |
| 18 |
NTE2505 |
Silicon NPN Transistor Low Frequency, General Purpose Amp |
NTE Electronics |
| 19 |
NTE26 |
Silicon NPN Transistor Low Noise Audio Amplifier |
NTE Electronics |
| 20 |
U1714 |
N-Channel Field Effect Transistor Low Leakage Amplifier |
Amelco Semiconductor |
| | | |
