| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N7002 |
0.2W Power MOSFET, 60V Vdss, 0.115A Id, 7.5Om Rds |
SemiWell Semiconductor |
| 2 |
AD815AV |
18V; 20mA; high output current differential driver. For ADSL, HDLS and VDSL line interface driver, coil or transformer driver |
Analog Devices |
| 3 |
AD816AYR |
18V; 500mA differential driver and dual noise (VF) amplifier. For ADSL, VDSL and HDSL line interface driver and receiver |
Analog Devices |
| 4 |
AD8398A |
Single Port VDSL2 Line Driver with Shutdown |
Analog Devices |
| 5 |
BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 6 |
BF1005R |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB |
Infineon |
| 7 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
| 8 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 9 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 10 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 11 |
BF2030 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 12 |
BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 13 |
BF2030W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
| 14 |
BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 15 |
BF2040R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 16 |
BF2040W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
| 17 |
BF543 |
RF-MOSFET - VDS=15V, gfs=12mS, Gp=22dB, F=1dB |
Infineon |
| 18 |
BF998 |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
| 19 |
BF998R |
RF-MOSFET - VDS=8V, gfs=24mS, Gps=28dB, F=1dB |
Infineon |
| 20 |
BF999 |
RF-MOSFET - VDS=15V, gfs=16mS, Gp=25dB, F=1dB |
Infineon |
| 21 |
CSD13202Q2 |
N-Channel Power MOSFET, CSD13202Q2, 12V Vds, 9.3mohm Rdson4.5 (max) |
Texas Instruments |
| 22 |
CSD97370AQ5M |
Synchronous Buck NexFET� Power Stage, Vds 30V |
Texas Instruments |
| 23 |
CSD97370Q5M |
Synchronous Buck NexFET� Power Stage, Vds 30V |
Texas Instruments |
| 24 |
DLS8110 |
Spirent DLS 8110 VDSL Bridged Tap Simulator |
etc |
| 25 |
DSL03 |
Secondary protection for VDSL2 lines |
ST Microelectronics |
| 26 |
DSL03-010SC6 |
Secondary protection for VDSL2 lines |
ST Microelectronics |
| 27 |
DSL03-022SC6 |
Secondary protection for VDSL2 lines |
ST Microelectronics |
| 28 |
DSL03-024SC6 |
Secondary protection for VDSL2 lines |
ST Microelectronics |
| 29 |
EL1511 |
Driver, VDSL DMT & ADSL, Differential Line, Medium Power, 360mA Driver, Power Control |
Intersil |
| 30 |
HUF75333G3 |
Power dissipation 111 W Transistor polarity N Channel Current Id cont. 56 A Pitch lead 5.45 mm Voltage Vds max 55 V Resistance Rds on 0.016 R Temperature current 25 ?C Temperature power 25 ?C |
Fairchild Semiconductor |
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