| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CXK5B16120J |
65536-word X 16-bit High Speed Bi-CMOS Static RAM |
SONY |
| 2 |
CXK5B16120J-12 |
65536-word X 16-bit High Speed Bi-CMOS Static RAM |
SONY |
| 3 |
CXK5B16120J/TM-12 |
65536-word x 16-bit High Speed Bi-CMOS Static RAM |
SONY |
| 4 |
CXK5B16120TM-12 |
65536-word X 16-bit High Speed Bi-CMOS Static RAM |
SONY |
| 5 |
CXK5T16100TM |
-65536-word x 16-bit High Speed CMOS Static RAM |
SONY |
| 6 |
CXK5T16100TM |
65536-word x 16-bit High Speed CMOS Static RAM |
SONY |
| 7 |
CXK5T16100TM-12LLX |
65536-word x 16-bit High Speed CMOS Static RAM |
SONY |
| 8 |
CXK5V16100TM |
65536-word X 16-bit High Speed CMOS Static RAM |
SONY |
| 9 |
CXK5V16100TM-10LLX |
65536-word x 16-bit High Speed CMOS Static RAM |
SONY |
| 10 |
CXK5V16100TM-85LLX |
65536-word x 16-bit High Speed CMOS Static RAM |
SONY |
| 11 |
DSP56F802TA80 |
16-bit digital signal processor, up to 40 MIPS operation at 80 MHz core frequency, 8K x 16-bit words program flash, 1K x 16-bit words program RAM, 2K x 16-bit words data flash, 1K x 16-bit words data RAM, 2K x 16-bit words boot flash |
Motorola |
| 12 |
DSP56F802TA80 |
16-bit digital signal processor, up to 40 MIPS operation at 80 MHz core frequency, 8K x 16-bit words program flash, 1K x 16-bit words program RAM, 2K x 16-bit words data flash, 1K x 16-bit words data RAM, 2K x 16-bit words boot flash |
Motorola |
| 13 |
DSP56F802TA80 |
16-bit digital signal processor, up to 40 MIPS operation at 80 MHz core frequency, 8K x 16-bit words program flash, 1K x 16-bit words program RAM, 2K x 16-bit words data flash, 1K x 16-bit words data RAM, 2K x 16-bit words boot flash |
Motorola |
| 14 |
DSP56F802TA80 |
16-bit digital signal processor, up to 40 MIPS operation at 80 MHz core frequency, 8K x 16-bit words program flash, 1K x 16-bit words program RAM, 2K x 16-bit words data flash, 1K x 16-bit words data RAM, 2K x 16-bit words boot flash |
Motorola |
| 15 |
DSP56F802TA80 |
16-bit digital signal processor, up to 40 MIPS operation at 80 MHz core frequency, 8K x 16-bit words program flash, 1K x 16-bit words program RAM, 2K x 16-bit words data flash, 1K x 16-bit words data RAM, 2K x 16-bit words boot flash |
Motorola |
| 16 |
HM514260AJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 17 |
HM514260AJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 18 |
HM514260AJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 19 |
HM514260ALJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 20 |
HM514260ALJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 21 |
HM514260ALJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 22 |
HM514260ALRR-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 23 |
HM514260ALRR-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 24 |
HM514260ALRR-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 25 |
HM514260ALTT-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 26 |
HM514260ALTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 27 |
HM514260ALTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 28 |
HM514260ALZ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 29 |
HM514260ALZ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 30 |
HM514260ALZ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
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