No. |
Part Name |
Description |
Manufacturer |
1 |
1.5FMCJ170 |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 153V(min), 187V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
2 |
1.5FMCJ180A |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 171V(min), 189V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
3 |
1.5KE170 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 153V(min), 187V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
4 |
1.5KE170 |
Transient voltage suppressor. 1500 W. Breakdown voltage 153.0 V(min), 187.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
5 |
1.5KE170C |
Transient voltage suppressor. 1500 W. Breakdown voltage 153.0 V(min), 187.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
6 |
1.5KE180A |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 171V(min), 189V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
7 |
1.5KE180A |
Transient voltage suppressor. 1500 W. Breakdown voltage 171.0 V(min), 189.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
8 |
1.5KE180CA |
1500 Watt mosorb zener transient voltage suppressors, 180V |
ON Semiconductor |
9 |
1.5KE180CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 171.0 V(min), 189.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
10 |
1.5KE180CARL4 |
1500 Watt mosorb zener transient voltage suppressors, 180V |
ON Semiconductor |
11 |
1457 |
Bulk Metal Foil Technology, 18 Pin Dual-In-Line Hermetic Resistor Network |
Vishay |
12 |
1617AM10 |
10 W, 18 V, 1500-1800 MHz common emitter transistor |
GHz Technology |
13 |
1819AB12 |
12 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
14 |
1819AB25 |
25 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
15 |
1819AB35 |
35 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
16 |
1819AB4 |
4 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
17 |
1N2816 |
50 Watt Silicon Zener Diode, TO-3 case, 18V |
Transitron Electronic |
18 |
1N2816A |
50 Watt Silicon Zener Diode, TO-3 case, 18V tolerance ±10% |
Transitron Electronic |
19 |
1N2816AR |
50 Watt Silicon Zener Diode, TO-3 case, 18V reverse polarity tolerance ±10% |
Transitron Electronic |
20 |
1N2816B |
50 Watt Silicon Zener Diode, TO-3 case, 18V, tolerance ±5% |
Transitron Electronic |
21 |
1N2816BR |
50 Watt Silicon Zener Diode, TO-3 case, 18V reverse polarity, tolerance ±5% |
Transitron Electronic |
22 |
1N2816R |
50 Watt Silicon Zener Diode, TO-3 case, 18V reverse polarity |
Transitron Electronic |
23 |
1N2845 |
50 Watt Silicon Zener Diode, TO-3 case, 180V |
Transitron Electronic |
24 |
1N2845A |
50 Watt Silicon Zener Diode, TO-3 case, 180V tolerance ±10% |
Transitron Electronic |
25 |
1N2845AR |
50 Watt Silicon Zener Diode, TO-3 case, 180V reverse polarity tolerance ±10% |
Transitron Electronic |
26 |
1N2845B |
50 Watt Silicon Zener Diode, TO-3 case, 180V, tolerance ±5% |
Transitron Electronic |
27 |
1N2845BR |
50 Watt Silicon Zener Diode, TO-3 case, 180V reverse polarity, tolerance ±5% |
Transitron Electronic |
28 |
1N2845R |
50 Watt Silicon Zener Diode, TO-3 case, 180V reverse polarity |
Transitron Electronic |
29 |
1N3317 |
50 Watt Silicon Zener Diode, DO-5 case, 18V |
Transitron Electronic |
30 |
1N3317A |
50 Watt Silicon Zener Diode, DO-5 case, 18V tolerance ±10% |
Transitron Electronic |
| | | |