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Datasheets for , 18

Datasheets found :: 1662
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No. Part Name Description Manufacturer
1 1.5FMCJ170 Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 153V(min), 187V(max). For bidirectional use C or CA suffix. Rectron Semiconductor
2 1.5FMCJ180A Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 171V(min), 189V(max). For bidirectional use C or CA suffix. Rectron Semiconductor
3 1.5KE170 GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 153V(min), 187V(max). For bidirectional use C or CA suffix. Rectron Semiconductor
4 1.5KE170 Transient voltage suppressor. 1500 W. Breakdown voltage 153.0 V(min), 187.0 V(max). Test current 1.0 mA. Shanghai Sunrise Electronics
5 1.5KE170C Transient voltage suppressor. 1500 W. Breakdown voltage 153.0 V(min), 187.0 V(max). Test current 1.0 mA. Shanghai Sunrise Electronics
6 1.5KE180A GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 171V(min), 189V(max). For bidirectional use C or CA suffix. Rectron Semiconductor
7 1.5KE180A Transient voltage suppressor. 1500 W. Breakdown voltage 171.0 V(min), 189.0 V(max). Test current 1.0 mA. Shanghai Sunrise Electronics
8 1.5KE180CA 1500 Watt mosorb zener transient voltage suppressors, 180V ON Semiconductor
9 1.5KE180CA Transient voltage suppressor. 1500 W. Breakdown voltage 171.0 V(min), 189.0 V(max). Test current 1.0 mA. Shanghai Sunrise Electronics
10 1.5KE180CARL4 1500 Watt mosorb zener transient voltage suppressors, 180V ON Semiconductor
11 1457 Bulk Metal Foil Technology, 18 Pin Dual-In-Line Hermetic Resistor Network Vishay
12 1617AM10 10 W, 18 V, 1500-1800 MHz common emitter transistor GHz Technology
13 1819AB12 12 W, 25 V, 1808-1880 MHz common emitter transistor GHz Technology
14 1819AB25 25 W, 25 V, 1808-1880 MHz common emitter transistor GHz Technology
15 1819AB35 35 W, 25 V, 1808-1880 MHz common emitter transistor GHz Technology
16 1819AB4 4 W, 25 V, 1808-1880 MHz common emitter transistor GHz Technology
17 1N2816 50 Watt Silicon Zener Diode, TO-3 case, 18V Transitron Electronic
18 1N2816A 50 Watt Silicon Zener Diode, TO-3 case, 18V tolerance ±10% Transitron Electronic
19 1N2816AR 50 Watt Silicon Zener Diode, TO-3 case, 18V reverse polarity tolerance ±10% Transitron Electronic
20 1N2816B 50 Watt Silicon Zener Diode, TO-3 case, 18V, tolerance ±5% Transitron Electronic
21 1N2816BR 50 Watt Silicon Zener Diode, TO-3 case, 18V reverse polarity, tolerance ±5% Transitron Electronic
22 1N2816R 50 Watt Silicon Zener Diode, TO-3 case, 18V reverse polarity Transitron Electronic
23 1N2845 50 Watt Silicon Zener Diode, TO-3 case, 180V Transitron Electronic
24 1N2845A 50 Watt Silicon Zener Diode, TO-3 case, 180V tolerance ±10% Transitron Electronic
25 1N2845AR 50 Watt Silicon Zener Diode, TO-3 case, 180V reverse polarity tolerance ±10% Transitron Electronic
26 1N2845B 50 Watt Silicon Zener Diode, TO-3 case, 180V, tolerance ±5% Transitron Electronic
27 1N2845BR 50 Watt Silicon Zener Diode, TO-3 case, 180V reverse polarity, tolerance ±5% Transitron Electronic
28 1N2845R 50 Watt Silicon Zener Diode, TO-3 case, 180V reverse polarity Transitron Electronic
29 1N3317 50 Watt Silicon Zener Diode, DO-5 case, 18V Transitron Electronic
30 1N3317A 50 Watt Silicon Zener Diode, DO-5 case, 18V tolerance ±10% Transitron Electronic


Datasheets found :: 1662
Page: | 1 | 2 | 3 | 4 | 5 |



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