| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N3441 |
Medium power silicon N-P-N transistor. 160V, 25W. |
General Electric Solid State |
| 2 |
2N4898 |
Silicon P-N-P medium power transistor. 40V, 25W. |
General Electric Solid State |
| 3 |
2N4898 |
POWER TRANSISTORS(1A, 25W) |
MOSPEC Semiconductor |
| 4 |
2N4899 |
Silicon P-N-P medium power transistor. 60V, 25W. |
General Electric Solid State |
| 5 |
2N4899 |
POWER TRANSISTORS(1A, 25W) |
MOSPEC Semiconductor |
| 6 |
2N4900 |
Silicon P-N-P medium power transistor. 80V, 25W. |
General Electric Solid State |
| 7 |
2N4900 |
POWER TRANSISTORS(1A, 25W) |
MOSPEC Semiconductor |
| 8 |
8481B |
8481B High Power Sensor, 10 MHz to 18 GHz, 25W |
Agilent (Hewlett-Packard) |
| 9 |
8482B |
8482B High-Power Sensor, 100 kHz to 4.2 GHz, 25W |
Agilent (Hewlett-Packard) |
| 10 |
MM1603 |
NPN silicon RF Power Transistor designed for amplifier or oscillator applications in military and industrial equipment, 25W Power Output at 13,6V |
Motorola |
| 11 |
MRAL1417-25 |
MICroAMP 1400-1700MHz, full MRA performance at 22 volts Vcc, gold metalization, common base, 25W |
TRW |
| 12 |
NTE1320 |
Integrated Circuit Module, Hybrid, Audio Power Amp, 25W, 2 Power Supplies Required |
NTE Electronics |
| 13 |
NTE1331 |
Integrated Circuit Module - Dual, Audio Power Amplifier, 25W/Channel, 2 Power Supplies Required |
NTE Electronics |
| 14 |
NTE1818 |
Integrated Circuit Module, AF PO, 25W/Ch, Dual Power Supply |
NTE Electronics |
| 15 |
PHI214-25L |
Radar Pulsed Power Transistor, 25W, 300ms Pulse, 10% Duty 1.2 - 1.4 GHz |
Tyco Electronics |
| 16 |
PHI214-25S |
Radar Pulsed Power Transistor, 25W, lms Pulse, 10% Duty 1.2 - 1.4 GHz |
Tyco Electronics |
| 17 |
STR-F6672 |
SMPS primary IC, 900V, 25W |
Sanken |
| | | |
