Datasheets for , 4

Datasheets found :: 15646

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No.	Part Name	Description	Manufacturer
1	0405-100	Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W	SGS Thomson Microelectronics
2	0405-30	Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W	SGS Thomson Microelectronics
3	1.5FMCJ400	Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 360V(min), 440V(max). For bidirectional use C or CA suffix.	Rectron Semiconductor
4	1.5FMCJ400A	Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 380V(min), 420V(max). For bidirectional use C or CA suffix.	Rectron Semiconductor
5	1.5KE400	GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 360V(min), 440V(max). For bidirectional use C or CA suffix.	Rectron Semiconductor
6	1.5KE400A	GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 380V(min), 420V(max). For bidirectional use C or CA suffix.	Rectron Semiconductor
7	1.5KE400C	Transient voltage suppressor. 1500 W. Breakdown voltage 360.0 V(min), 440.0 V(max). Test current 1.0 mA.	Shanghai Sunrise Electronics
8	1.5KE400CA	Transient voltage suppressor. 1500 W. Breakdown voltage 380.0 V(min), 420.0 V(max). Test current 1.0 mA.	Shanghai Sunrise Electronics
9	1.5KE440C	Transient voltage suppressor. 1500 W. Breakdown voltage 396.0 V(min), 484.0 V(max). Test current 1.0 mA.	Shanghai Sunrise Electronics
10	1.5KE440CA	Transient voltage suppressor. 1500 W. Breakdown voltage 418.0 V(min), 462.0 V(max). Test current 1.0 mA.	Shanghai Sunrise Electronics
11	128MX72 SDRAM (INTEL 1.2 VER BASE)	128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec	Samsung Electronic
12	128MX72 SDRAM (INTEL 1.2 VER BASE)	128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet	Samsung Electronic
13	128MX72 SDRAM (INTEL 1.2 VER BASE)	128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet	Samsung Electronic
14	1403	Bulk Metal Foil Technology, 4 Pin Transistor Outline Hermetic Resistor Network, Smallest Available Miniature Hermetically-Sealed Network	Vishay
15	1680AD	1680AD Standalone Logic Analyzer with 800 MHz Timing/200 MHz State, 136 Channels, 4M Memory	Agilent (Hewlett-Packard)
16	1681AD	1681AD Standalone Logic Analyzer with 800 MHz Timing/200 MHz State, 102 Channels, 4M Memory	Agilent (Hewlett-Packard)
17	1682AD	1682AD Standalone Logic Analyzer with 800 MHz Timing/200 MHz State, 68 Channels, 4M Memory	Agilent (Hewlett-Packard)
18	1683AD	1683AD Standalone Logic Analyzer with 800 MHz Timing/200 MHz State, 34 Channels, 4M Memory	Agilent (Hewlett-Packard)
19	1690AD	1690AD PC-Hosted Logic Analyzer with 800 MHz Timing/200 MHz State, 136 Channels, 4M Memory	Agilent (Hewlett-Packard)
20	1691AD	1691AD PC-Hosted Logic Analyzer with 800 MHz Timing/200 MHz State, 102 Channels, 4M Memory	Agilent (Hewlett-Packard)
21	1692AD	1692AD PC-Hosted Logic Analyzer with 800 MHz Timing/200 MHz State, 68 Channels, 4M Memory	Agilent (Hewlett-Packard)
22	1693AD	1693AD PC-Hosted Logic Analyzer with 800 MHz Timing/200 MHz State, 34 Channels, 4M Memory	Agilent (Hewlett-Packard)
23	1731	Marking for NE32740(C) part number, 40A/B NEC package	NEC
24	188	Subminiature krypton lamp with clear-end. 5.0V, 1.00A, 42 lumens.	Gilway Technical Lamp
25	1924	Marking for NE32740A part number, 40A/B NEC package	NEC
26	1925	Marking for NE32740 part number, 40A/B NEC package	NEC
27	1926	Marking for NE73440A(D) part number, 40A/B NEC package	NEC
28	1927	Marking for NE73440B(D) part number, 40A/B NEC package	NEC
29	1N2827	50 Watt Silicon Zener Diode, TO-3 case, 43V	Transitron Electronic
30	1N2827A	50 Watt Silicon Zener Diode, TO-3 case, 43V tolerance ±10%	Transitron Electronic

Datasheets found :: 15646

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