| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N270JTXV |
100 V, 60 mA, gold bonded germanium diode |
BKC International Electronics |
| 2 |
1N4005 |
1 AMP, 600V GLASS RECTIFIER |
ITT Semiconductors |
| 3 |
1N4005 |
1.0A, 600V ultra fast recovery rectifier |
MCC |
| 4 |
1N4005GP |
1.0A, 600V ultra fast recovery rectifier |
MCC |
| 5 |
1N4937 |
1.0A, 600V ultra fast recovery rectifier |
MCC |
| 6 |
1N4937GP |
1.0A, 600V ultra fast recovery rectifier |
MCC |
| 7 |
1N4946 |
1.0A, 600V ultra fast recovery rectifier |
MCC |
| 8 |
1N4946GP |
1.0A, 600V ultra fast recovery rectifier |
MCC |
| 9 |
1N5397B |
1.5A, 600V ultra fast recovery rectifier |
MCC |
| 10 |
1N5397GP |
1.5A, 600V ultra fast recovery rectifier |
MCC |
| 11 |
1N5406 |
3 AMPS, 600 Volts Silicon Rectifier |
ITT Semiconductors |
| 12 |
1N5406 |
3.0A, 600V ultra fast recovery rectifier |
MCC |
| 13 |
1N5406GP |
3.0A, 600V ultra fast recovery rectifier |
MCC |
| 14 |
1N5552 |
5A standard recovery rectifier diode, 600V |
Semtech |
| 15 |
1N5711 |
15mA, 60V ultra fast recovery rectifier |
MCC |
| 16 |
1S1890-2C2 |
Rectifier stack, 600V 2.4A |
TOSHIBA |
| 17 |
1S1890-3A2 |
Rectifier stack, 600V |
TOSHIBA |
| 18 |
1S1890-4B2 |
Rectifier stack, 600V |
TOSHIBA |
| 19 |
1S1890-6A2 |
Rectifier stack, 600V |
TOSHIBA |
| 20 |
2N2905A |
60V, 600mA PNP Small Signal Transistor - TO-39 |
ON Semiconductor |
| 21 |
2N2907A |
60V, 600mA PNP Small Signal Transistor - TO-18 |
ON Semiconductor |
| 22 |
2N3702 |
0.625W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.600A Ic, 60 - 300 hFE |
Continental Device India Limited |
| 23 |
2N3724 |
1.000W Switching NPN Metal Can Transistor. 30V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 24 |
2N3725 |
1.000W Switching NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 25 |
2N3873 |
SCRs 35 Ampere RMS, 600V |
Motorola |
| 26 |
2N3906 |
0.625W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 60 - hFE |
Continental Device India Limited |
| 27 |
2N4400 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
| 28 |
2N4401 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
| 29 |
2N4409 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.250A Ic, 60 - 400 hFE |
Continental Device India Limited |
| 30 |
2N4899 |
Medium-power PNP silicon power transistor. 4 A, 60 V, 25 W. |
Motorola |
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