No. |
Part Name |
Description |
Manufacturer |
1 |
0912-25 |
25 W, 50 V internally matched, common base transistor |
Acrian |
2 |
0912-25-2 |
25 W, 50 V internally matched, common base transistor |
Acrian |
3 |
0912-25-3 |
25 W, 50 V internally matched, common base transistor |
Acrian |
4 |
0912-45 |
45 W, 50 V internally matched, common base transistor |
Acrian |
5 |
0912-45-2 |
45 W, 50 V internally matched, common base transistor |
Acrian |
6 |
0912-45-3 |
45 W, 50 V internally matched, common base transistor |
Acrian |
7 |
0912-7 |
7 W, 50 V internally matched, common base transistor |
Acrian |
8 |
0912-7-2 |
7 W, 50 V internally matched, common base transistor |
Acrian |
9 |
0912-7-3 |
7 W, 50 V internally matched, common base transistor |
Acrian |
10 |
100C0911 |
DAICO ATTENUATORS, Conn. |
DAICO Industries |
11 |
100C0912 |
DAICO ATTENUATORS, Conn. |
DAICO Industries |
12 |
100C1521 |
DAICO ATTENUATORS, Conn. |
DAICO Industries |
13 |
100C1575 |
DAICO ATTENUATORS, Conn. |
DAICO Industries |
14 |
100C1818 |
DAICO ATTENUATORS, Conn. |
DAICO Industries |
15 |
10SI05 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 50V |
IPRS Baneasa |
16 |
10SI1 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 100V |
IPRS Baneasa |
17 |
10SI10 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1000V |
IPRS Baneasa |
18 |
10SI12 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1200V |
IPRS Baneasa |
19 |
10SI2 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 200V |
IPRS Baneasa |
20 |
10SI3 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 300V |
IPRS Baneasa |
21 |
10SI4 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 400V |
IPRS Baneasa |
22 |
10SI5 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 500V |
IPRS Baneasa |
23 |
10SI6 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 600V |
IPRS Baneasa |
24 |
10SI7 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 700V |
IPRS Baneasa |
25 |
10SI8 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 800V |
IPRS Baneasa |
26 |
10SI9 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 900V |
IPRS Baneasa |
27 |
1242 (RJ26 STYLE) |
Bulk Metal Foil Technology, Precision Trimming Potentiometers, QPL Approved 1/4 Inch Square, Qualified to Mil-PRF-22097, Char. F, RJ26 |
Vishay |
28 |
12CWQ10G |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
29 |
12CWQ10GPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
30 |
12CWQ10GTR |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
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