No. |
Part Name |
Description |
Manufacturer |
1 |
110IMY15-03-8RG |
15 Watt, input voltage range:50-150V output voltage 5V (3500mA) DC/DC converter |
Power-One |
2 |
13PD100-TO |
The 13PD100-TO, an InGaAs photodiode with a 100µm-diameter photosensitive region and packaged in a TO-46 header, is the largest ... |
Anadigics Inc |
3 |
13PD150-TO |
The 13PD150-TO, an InGaAs photodiode with a 150µm-diameter photosensitive region and packaged in a TO-46 header, is intended ... |
Anadigics Inc |
4 |
1413 |
Bulk Metal Foil Technology, 8 Pin Transistor Outline Hermetic Resistor Network, Ideal for Uncomplicated Networks |
Vishay |
5 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
6 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
7 |
16LH |
- Vishay - Motion transducers, Integrated Cylinders |
Vishay |
8 |
195D |
Solid Tantalum Chip Capacitors, Conformal, Industrial Grade, TANTAMOUNT® Tantalum Chips with Conformal Terminals, Minimum size, Meets IEC Specification QC300801/US0002, 2 Standard Electroplate Terminations |
Vishay |
9 |
1B22 |
Programmable, Isolated Voltage-to-Current Converter |
Analog Devices |
10 |
1B22AN |
Programmable, Isolated Voltage-to-Current Converter |
Analog Devices |
11 |
1N4001 |
Silicon rectifier, double diffused diode, in a F-126 plastic case 1A 50V |
IPRS Baneasa |
12 |
1N4001-G |
General Purpose Rectifier, VRRM=50V, VR=50V, IO=1A |
Comchip Technology |
13 |
1N4002 |
Silicon rectifier, double diffused diode, in a F-126 plastic case 1A 100V |
IPRS Baneasa |
14 |
1N4002-G |
General Purpose Rectifier, VRRM=100V, VR=100V, IO=1A |
Comchip Technology |
15 |
1N4003 |
Silicon rectifier, double diffused diode, in a F-126 plastic case 1A 200V |
IPRS Baneasa |
16 |
1N4003-G |
General Purpose Rectifier, VRRM=200V, VR=200V, IO=1A |
Comchip Technology |
17 |
1N4004 |
Silicon rectifier, double diffused diode, in a F-126 plastic case 1A 400V |
IPRS Baneasa |
18 |
1N4004-G |
General Purpose Rectifier, VRRM=400V, VR=400V, IO=1A |
Comchip Technology |
19 |
1N4005 |
Silicon rectifier, double diffused diode, in a F-126 plastic case 1A 600V |
IPRS Baneasa |
20 |
1N4005-G |
General Purpose Rectifier, VRRM=600V, VR=600V, IO=1A |
Comchip Technology |
21 |
1N4006 |
Silicon rectifier, double diffused diode, in a F-126 plastic case 1A 800V |
IPRS Baneasa |
22 |
1N4006-G |
General Purpose Rectifier, VRRM=800V, VR=800V, IO=1A |
Comchip Technology |
23 |
1N4007 |
Silicon rectifier, double diffused diode, in a F-126 plastic case 1A 1000V |
IPRS Baneasa |
24 |
1N4007-G |
General Purpose Rectifier, VRRM=1000V, VR=1000V, IO=1A |
Comchip Technology |
25 |
1N4148-G |
Small Signal Switching Diodes, VRRM=100V, VR=100V, PD=0mW, IF=150mA |
Comchip Technology |
26 |
1N5370B |
Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 56V, Izt =20mA |
Panjit International Inc |
27 |
1N5380B |
Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 120V, Izt =10mA |
Panjit International Inc |
28 |
1N5400-G |
General Purpose Rectifier, VRRM=50V, VR=50V, IO=3A |
Comchip Technology |
29 |
1N5401-G |
General Purpose Rectifier, VRRM=100V, VR=100V, IO=3A |
Comchip Technology |
30 |
1N5402-G |
General Purpose Rectifier, VRRM=200V, VR=200V, IO=3A |
Comchip Technology |
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