| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 2 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 3 |
144B-05 |
Motorola case, dimensions, similar with .380 STUD |
Motorola |
| 4 |
145A-10 |
Motorola case, dimensions, similar with .500 STUD |
Motorola |
| 5 |
145B-09 |
Motorola case, dimensions, similar with .380 STUD |
Motorola |
| 6 |
145D-01 |
Motorola case, dimensions, similar with .380 SOE |
Motorola |
| 7 |
1461 |
Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks |
Vishay |
| 8 |
1463 |
Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks |
Vishay |
| 9 |
1464 |
Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks |
Vishay |
| 10 |
1466 |
Bulk Metal Foil Technology, Single-In-Line Hermetic Resistor Networks |
Vishay |
| 11 |
1N4001 |
50 V, silicon rectifier diode |
BKC International Electronics |
| 12 |
1N4002 |
100 V, silicon rectifier diode |
BKC International Electronics |
| 13 |
1N4003 |
200 V, silicon rectifier diode |
BKC International Electronics |
| 14 |
1N4004 |
400 V, silicon rectifier diode |
BKC International Electronics |
| 15 |
1N4005 |
600 V, silicon rectifier diode |
BKC International Electronics |
| 16 |
1N4006 |
800 V, silicon rectifier diode |
BKC International Electronics |
| 17 |
1N4007 |
1000 V, silicon rectifier diode |
BKC International Electronics |
| 18 |
1N4148 |
Silicon diodes, signal and fast rectification |
SESCOSEM |
| 19 |
1N4370 |
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-10% standard tolerance. |
Jinan Gude Electronic Device |
| 20 |
1N4370A |
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 21 |
1N4370C |
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 22 |
1N4370D |
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 23 |
1N4371A |
500mW, silicon zener diode. Zener voltage 2.7 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 24 |
1N4371C |
500mW, silicon zener diode. Zener voltage 2.7 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 25 |
1N4371D |
500mW, silicon zener diode. Zener voltage 2.7 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 26 |
1N4372A |
500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 27 |
1N4372C |
500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 28 |
1N4372D |
500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 29 |
1N5261 |
2Mbps, Single Pair HDSL ANALOG FRONT END |
Burr Brown |
| 30 |
1N5262 |
2Mbps, Single Pair HDSL ANALOG FRONT END |
Burr Brown |
| | | |
