| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1S85 |
Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance |
Hitachi Semiconductor |
| 2 |
1S85H |
Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance |
Hitachi Semiconductor |
| 3 |
A701 |
A701: Test slide, various cancers plus corresponding normal |
etc |
| 4 |
ACCESORIES |
Accesories from TUNGSRAM Handbuch der Transistoren 1971, HL-M613/A, HL-M673, EA-M131, CL-M024, CL-M031, VA-M168/A |
TUNGSRAM |
| 5 |
AD549SH_883B |
18V; 500mW; ultra low input bias current operational amplifier. For electrometer amplifiers, photodiode preamp, pH electrode buffer, vacuum Ion gage measurement |
Analog Devices |
| 6 |
ADP1871 |
Synchronous Buck Controller with Constant On-Time, Valley Current Mode, and Power Save Mode |
Analog Devices |
| 7 |
ADP1875 |
Synchronous Buck Controller with Constant On-Time, Valley Current Mode, and Power Saving Mode |
Analog Devices |
| 8 |
AM55-0023 |
800-2000 MHz, variable voltage gain control amplifier |
MA-Com |
| 9 |
AM55-0023RTR |
800-2000 MHz, variable voltage gain control amplifier |
MA-Com |
| 10 |
AM55-0023SMB |
800-2000 MHz, variable voltage gain control amplifier |
MA-Com |
| 11 |
AM55-0023TR |
800-2000 MHz, variable voltage gain control amplifier |
MA-Com |
| 12 |
BB313 |
βB313 Triple, Variable Capacitance Diode (Varicap) |
IPRS Baneasa |
| 13 |
BB313A |
βB313A Triple, Variable Capacitance Diode (Varicap) |
IPRS Baneasa |
| 14 |
BB313B |
βB313B Triple, Variable Capacitance Diode (Varicap) |
IPRS Baneasa |
| 15 |
BB413 |
βB413 Triple, Variable Capacitance Diode (Varicap) |
IPRS Baneasa |
| 16 |
BB413A |
βB413A Triple, Variable Capacitance Diode (Varicap) |
IPRS Baneasa |
| 17 |
BB413B |
βB413B Triple, Variable Capacitance Diode (Varicap) |
IPRS Baneasa |
| 18 |
CHA2291 |
10-18GHz Low Noise, Variable Gain Amplifier |
United Monolithic Semiconductors |
| 19 |
CHA2291-99F/00 |
10-18GHz Low Noise, Variable Gain Amplifier |
United Monolithic Semiconductors |
| 20 |
CHA2292 |
17-24GHz Low Noise, Variable Gain Amplifier |
United Monolithic Semiconductors |
| 21 |
CHA2292-99F/00 |
17-24GHz Low Noise, Variable Gain Amplifier |
United Monolithic Semiconductors |
| 22 |
CHA2293 |
24.5-29.5GHz Low Noise, Variable Gain Amplifier |
United Monolithic Semiconductors |
| 23 |
CHA2293-99F/00 |
24.5-29.5GHz Low Noise, Variable Gain Amplifier |
United Monolithic Semiconductors |
| 24 |
CHA2294 |
35-40GHz Low Noise, Variable Gain Amplifier |
United Monolithic Semiconductors |
| 25 |
CHA2294-99F/00 |
35-40GHz Low Noise, Variable Gain Amplifier |
United Monolithic Semiconductors |
| 26 |
CL |
Wirewound Resistors, Commercial Power, Tab Type Terminals, Variety of core diameters and lengths, Numerous mounting hole sizes and shapes, High performance for low cost |
Vishay |
| 27 |
CLC522 |
Wideband, Variable Gain Amp |
National Semiconductor |
| 28 |
CLC522AJE-TR13 |
Wideband, Variable Gain Amp |
National Semiconductor |
| 29 |
CLC522MDC |
Wideband, Variable Gain Amp |
National Semiconductor |
| 30 |
CLC5523 |
Low Power, Variable Gain Amplifier |
National Semiconductor |
| | | |
