| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BCR103FE6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 2,2 kOhm |
Infineon |
| 2 |
BCR103FE6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 2,2 kOhm |
Infineon |
| 3 |
BCR103L3E6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 2,2 kOhm |
Infineon |
| 4 |
BCR103L3E6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 2,2 kOhm |
Infineon |
| 5 |
BCR108FE6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm |
Infineon |
| 6 |
BCR108L3E6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm |
Infineon |
| 7 |
BCR108SE6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm SOT363 |
Infineon |
| 8 |
BCR153FE6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 2,2 kOhm |
Infineon |
| 9 |
BCR153FE6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 2,2 kOhm |
Infineon |
| 10 |
BCR153L3E6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 2,2 kOhm |
Infineon |
| 11 |
BCR153L3E6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 2,2 kOhm |
Infineon |
| 12 |
BCR153TE6327 |
Digital Transistors - R1=2,2 kOhm R2=2,2 kOhm |
Infineon |
| 13 |
BCR153TE6327 |
Digital Transistors - R1=2,2 kOhm R2=2,2 kOhm |
Infineon |
| 14 |
BCR158 |
Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm |
Infineon |
| 15 |
BCR158FE6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm |
Infineon |
| 16 |
BCR158L3E6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm |
Infineon |
| 17 |
BCR158T |
Digital Transistors - R1=2,2 kOhm R2=47 kOhm |
Infineon |
| 18 |
BCR158W |
Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm |
Infineon |
| 19 |
CM1213A |
ESD Protection Array, Low Capacitance, 1,2 and 4-Channel |
ON Semiconductor |
| 20 |
CSPESD302 |
1,2 and 3-Channel ESD Arrays in CSP |
California Micro Devices Corp |
| 21 |
CSPESD302G |
1,2 and 3-Channel ESD Arrays in CSP |
California Micro Devices Corp |
| 22 |
CSPESD303 |
1,2 and 3-Channel ESD Arrays in CSP |
California Micro Devices Corp |
| 23 |
CSPESD303G |
1,2 and 3-Channel ESD Arrays in CSP |
California Micro Devices Corp |
| 24 |
DA28F016XS-25 |
16-Mbit (1 Mbit x 16,2 Mbit x 8) synchronous flash memory. Vcc=3.3, 50 pF load, 1.5V I/O levels |
Intel |
| 25 |
E28F016XS-25 |
16-Mbit (1 Mbit x 16,2 Mbit x 8) synchronous flash memory. Vcc=3.3, 50 pF load, 1.5V I/O levels |
Intel |
| 26 |
F100118 |
-4.2 V to -5.7 V, 5-wide 5,4,4,4,2 OA/OAI gate |
National Semiconductor |
| 27 |
MASWSS0049-XFLS0 |
0.5-2 GHz,2 V dual-mode WCDMA and dual band GSM/DCS SP5T switch |
MA-Com |
| 28 |
MASWSS0049-XFLT1 |
0.5-2 GHz,2 V dual-mode WCDMA and dual band GSM/DCS SP5T switch |
MA-Com |
| 29 |
MASWSS0049-XFLT3 |
0.5-2 GHz,2 V dual-mode WCDMA and dual band GSM/DCS SP5T switch |
MA-Com |
| 30 |
PH1214-2M |
1200-1400 MHz,2 W, 100 ms pulse,radar pulsed power transistor |
MA-Com |
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