No. |
Part Name |
Description |
Manufacturer |
1 |
BCR103FE6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 2,2 kOhm |
Infineon |
2 |
BCR103FE6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 2,2 kOhm |
Infineon |
3 |
BCR103L3E6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 2,2 kOhm |
Infineon |
4 |
BCR103L3E6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 2,2 kOhm |
Infineon |
5 |
BCR108FE6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm |
Infineon |
6 |
BCR108L3E6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm |
Infineon |
7 |
BCR108SE6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm SOT363 |
Infineon |
8 |
BCR153FE6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 2,2 kOhm |
Infineon |
9 |
BCR153FE6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 2,2 kOhm |
Infineon |
10 |
BCR153L3E6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 2,2 kOhm |
Infineon |
11 |
BCR153L3E6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 2,2 kOhm |
Infineon |
12 |
BCR153TE6327 |
Digital Transistors - R1=2,2 kOhm R2=2,2 kOhm |
Infineon |
13 |
BCR153TE6327 |
Digital Transistors - R1=2,2 kOhm R2=2,2 kOhm |
Infineon |
14 |
BCR158 |
Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm |
Infineon |
15 |
BCR158FE6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm |
Infineon |
16 |
BCR158L3E6327 |
Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm |
Infineon |
17 |
BCR158T |
Digital Transistors - R1=2,2 kOhm R2=47 kOhm |
Infineon |
18 |
BCR158W |
Digital Transistors - R1= 2,2 kOhm ; R2= 47 kOhm |
Infineon |
19 |
CM1213A |
ESD Protection Array, Low Capacitance, 1,2 and 4-Channel |
ON Semiconductor |
20 |
CSPESD302 |
1,2 and 3-Channel ESD Arrays in CSP |
California Micro Devices Corp |
21 |
CSPESD302G |
1,2 and 3-Channel ESD Arrays in CSP |
California Micro Devices Corp |
22 |
CSPESD303 |
1,2 and 3-Channel ESD Arrays in CSP |
California Micro Devices Corp |
23 |
CSPESD303G |
1,2 and 3-Channel ESD Arrays in CSP |
California Micro Devices Corp |
24 |
DA28F016XS-25 |
16-Mbit (1 Mbit x 16,2 Mbit x 8) synchronous flash memory. Vcc=3.3, 50 pF load, 1.5V I/O levels |
Intel |
25 |
E28F016XS-25 |
16-Mbit (1 Mbit x 16,2 Mbit x 8) synchronous flash memory. Vcc=3.3, 50 pF load, 1.5V I/O levels |
Intel |
26 |
F100118 |
-4.2 V to -5.7 V, 5-wide 5,4,4,4,2 OA/OAI gate |
National Semiconductor |
27 |
MASWSS0049-XFLS0 |
0.5-2 GHz,2 V dual-mode WCDMA and dual band GSM/DCS SP5T switch |
MA-Com |
28 |
MASWSS0049-XFLT1 |
0.5-2 GHz,2 V dual-mode WCDMA and dual band GSM/DCS SP5T switch |
MA-Com |
29 |
MASWSS0049-XFLT3 |
0.5-2 GHz,2 V dual-mode WCDMA and dual band GSM/DCS SP5T switch |
MA-Com |
30 |
PH1214-2M |
1200-1400 MHz,2 W, 100 ms pulse,radar pulsed power transistor |
MA-Com |
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