| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HM530281 |
331,776 WORD X 8 BIT FRAME MEMORY |
Hitachi Semiconductor |
| 2 |
HM530281RTT-20 |
20ns; V(cc): -1.0 to +7.0V; 1W; ; 331,776-word x 8-bit flame memory |
Hitachi Semiconductor |
| 3 |
HM530281RTT-25 |
25ns; V(cc): -1.0 to +7.0V; 1W; ; 331,776-word x 8-bit flame memory |
Hitachi Semiconductor |
| 4 |
HM530281RTT-34 |
34ns; V(cc): -1.0 to +7.0V; 1W; ; 331,776-word x 8-bit flame memory |
Hitachi Semiconductor |
| 5 |
HM530281RTT-45 |
45ns; V(cc): -1.0 to +7.0V; 1W; ; 331,776-word x 8-bit flame memory |
Hitachi Semiconductor |
| 6 |
HM530281TT |
331,776 WORD X 8 BIT FRAME MEMORY |
Hitachi Semiconductor |
| 7 |
HM530281TT-20 |
331,776 WORD X 8 BIT FRAME MEMORY |
Hitachi Semiconductor |
| 8 |
HM530281TT-25 |
331,776 WORD X 8 BIT FRAME MEMORY |
Hitachi Semiconductor |
| 9 |
HM530281TT-34 |
331,776 WORD X 8 BIT FRAME MEMORY |
Hitachi Semiconductor |
| 10 |
HM530281TT-45 |
331,776 WORD X 8 BIT FRAME MEMORY |
Hitachi Semiconductor |
| 11 |
M5M29GB160BVP-80 |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 12 |
M5M29GB160BWG |
16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
| 13 |
M5M29GB161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 14 |
M5M29GB161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 15 |
M5M29GT160BVP-80 |
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 16 |
M5M29GT160BWG |
16,777,216-bit (1048,576-word by 16-bit) CMOS 3.3V-only, block erase flash memory |
Mitsubishi Electric Corporation |
| 17 |
M5M29GT161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 18 |
M5M29GT161BWG |
16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
Mitsubishi Electric Corporation |
| 19 |
MD51V64405 |
16,777,216-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
OKI electronic components |
| 20 |
MD51V64405-50JA |
16,777,216-word x 4-bit dynamic RAM |
OKI electronic components |
| 21 |
MD51V64405-50TA |
16,777,216-word x 4-bit dynamic RAM |
OKI electronic components |
| 22 |
MD51V64405-60JA |
16,777,216-word x 4-bit dynamic RAM |
OKI electronic components |
| 23 |
MD51V64405-60TA |
16,777,216-word x 4-bit dynamic RAM |
OKI electronic components |
| 24 |
MF0096M-05AA |
96,075,776 bytes (memory) flash ATA PC card |
Mitsubishi Electric Corporation |
| 25 |
MH16D64AKQC-10 |
1,073,741,824-BIT (16,777,216-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 26 |
MH16D64AKQC-75 |
1,073,741,824-BIT (16,777,216-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 27 |
MH16D72AKLB-10 |
1,207.959,552-BIT (16,777,216-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 28 |
MH16D72AKLB-10 |
1,207.959,552-BIT (16,777,216-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 29 |
MH16D72AKLB-75 |
1,207.959,552-BIT (16,777,216-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 30 |
MH16D72AKLB-75 |
1,207.959,552-BIT (16,777,216-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
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