| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1SR18-100 |
Silicon rectifier diode - center-tapped type |
Shindengen |
| 2 |
1SR18-200 |
Silicon rectifier diode - center-tapped type |
Shindengen |
| 3 |
1SR18-400 |
Silicon rectifier diode - center-tapped type |
Shindengen |
| 4 |
1SR18R-100 |
Silicon rectifier diode - center-tapped type |
Shindengen |
| 5 |
1SR18R-200 |
Silicon rectifier diode - center-tapped type |
Shindengen |
| 6 |
1SR18R-400 |
Silicon rectifier diode - center-tapped type |
Shindengen |
| 7 |
209EGW |
3.0MM BI - COLOR (MULTI-COLOR) WITH COMMON CATHODE LEDS T-1 |
Everlight Electronics |
| 8 |
212R2S |
Silicon rectifier diode - Controlled avalanche |
SESCOSEM |
| 9 |
212R2SR |
Silicon rectifier diode - Controlled avalanche, anode connected to case |
SESCOSEM |
| 10 |
26R2S |
Silicon rectifier diode - Controlled avalanche |
SESCOSEM |
| 11 |
26R2SR |
Silicon rectifier diode - Controlled avalanche, anode connected to case |
SESCOSEM |
| 12 |
28R2S |
Silicon rectifier diode - Controlled avalanche |
SESCOSEM |
| 13 |
28R2SR |
Silicon rectifier diode - Controlled avalanche, anode connected to case |
SESCOSEM |
| 14 |
2CR-5 |
Lithium Batteries (For Europe) - Cylindrical type CR series / Standard type |
Panasonic |
| 15 |
2N4416 |
Wideband, High Gain, Single, N- Channel JFET |
Linear Systems |
| 16 |
2N4416A |
Wideband, High Gain, Single, N- Channel JFET |
Linear Systems |
| 17 |
2N5911 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
| 18 |
2N5912 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
| 19 |
2N5912C |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
| 20 |
2N5916 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
| 21 |
2N5917 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
| 22 |
2N6796 |
TMOS FET TRANSISTOR N - CHANNEL |
SemeLAB |
| 23 |
2N7227 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 400 Volt 0.315 Ohm |
Advanced Power Technology |
| 24 |
2N7228 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 500 Volt 0.415 Ohm |
Advanced Power Technology |
| 25 |
2SA0699 |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 26 |
2SA0699A |
Power Transistor - Silicon PNP Epitaxial Planar Type - Power Amplifier - Complementary Pair with 2SC1226, 2SC1226A |
Panasonic |
| 27 |
2SA1747 |
Transistor - Silicon PNP Epitaxial Planar Type - Complementary pair with 2SC4561 |
Panasonic |
| 28 |
2SD1608 |
Power Transistor - Silicon NPN Triple Diffused Planar Darlington Type - Complementary Pair with 2SB1108 |
Panasonic |
| 29 |
2SD1819 |
Transistor - Silicon NPN Epitaxial Planar Type - For general amplification - Complementary pair with 2SB1218 and 2SB1218A |
Panasonic |
| 30 |
2SD2181 |
Transistor - Silicon NPN Epitaxial Planar Type - For low-frequency output amplification - Complementary pair with 2SB1437 |
Panasonic |
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