No. |
Part Name |
Description |
Manufacturer |
1 |
1208 |
1-1/4 inch rectilinear - Industrial --> |
Vishay |
2 |
1248 |
1/4 inch square - Industrial --> |
Vishay |
3 |
1268 |
3/8 inch square - Industrial --> |
Vishay |
4 |
1268W100R |
Bulk Metal Foil Technology Precision Trimming Potentiometers 3/8 Inch Square/ RJ24 Style - Industrial Trimmer |
Vishay |
5 |
1280G |
3/4 inch rectilinear - Industrial --> |
Vishay |
6 |
1285G |
3/4 inch rectilinear - Industrial --> |
Vishay |
7 |
ADC100 |
High Resolution - Integrating ANALOG-TO-DIGITAL Converter |
Burr Brown |
8 |
ADC100BCD |
High Resolution - Integrating ANALOG-TO-DIGITAL Converter |
Burr Brown |
9 |
ADC100BOB |
High Resolution - Integrating ANALOG-TO-DIGITAL Converter |
Burr Brown |
10 |
ADC100SMD |
High Resolution - Integrating ANALOG-TO-DIGITAL Converter |
Burr Brown |
11 |
ADC100USB |
High Resolution - Integrating ANALOG-TO-DIGITAL Converter |
Burr Brown |
12 |
AN1050 |
ST6 - INPUT CAPTURE WITH ST62 16-BIT AUTO-RELOAD TIMER |
SGS Thomson Microelectronics |
13 |
AN1275 |
ST9 - IN-APPLICATION PROGRAMMING FOR THE ST92F120 |
SGS Thomson Microelectronics |
14 |
AN413 |
ST9 - INITIALIZATION OF THE ST9 |
SGS Thomson Microelectronics |
15 |
AN591 |
ST6 - INPUT CAPTURE WITH ST62 AUTO-RELOAD CAPTURE |
SGS Thomson Microelectronics |
16 |
AN900 |
MCUS - INTRODUCTION TO SEMICONDUCTOR TECHNOLOGY |
SGS Thomson Microelectronics |
17 |
APPLICATION NOTE |
Switching circuits examples - inverter circuit, monostable multivibrator circuit, astable multivibrator circuit, etc. |
TOSHIBA |
18 |
BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
19 |
BF1005R |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB |
Infineon |
20 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
21 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
22 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
23 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
24 |
BF2030 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
25 |
BF2030R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
26 |
BF2030W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB |
Infineon |
27 |
BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
28 |
BF2040R |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
29 |
BF2040W |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB |
Infineon |
30 |
BK-10V10T |
Nickel Metal Hydride Batteries - Infrastructure type |
Panasonic |
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