| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N6529U |
2000 V rectifier 0.05-0.25 A forward current, 70 ns recovery time |
Voltage Multipliers |
| 2 |
1N6531U |
3000 V rectifier 0.05-0.25 A forward current, 70 ns recovery time |
Voltage Multipliers |
| 3 |
1N6533U |
5000 V rectifier 0.05-0.25 A forward current, 70 ns recovery time |
Voltage Multipliers |
| 4 |
2N3906-G |
General Purpose Transistor, VCBO=-40V, VCEO=-40V, VEBO=-5V, IC=-0.2A |
Comchip Technology |
| 5 |
3D3428-0.25 |
MONOLITHIC 8-BIT PROGRAMMABLE DELAY LINE |
Data Delay Devices Inc |
| 6 |
3D7408-0.25 |
MONOLITHIC 8-BIT PROGRAMMABLE DELAY LINE |
Data Delay Devices Inc |
| 7 |
3D7408G-0.25 |
Delay 0.25 +/-0.15 ns, monolithic 8-BIT pragrammable delay line |
Data Delay Devices Inc |
| 8 |
3D7408G-0.5 |
Delay 0.5 +/-0.25 ns, monolithic 8-BIT pragrammable delay line |
Data Delay Devices Inc |
| 9 |
3D7408S-0.25 |
Delay 0.25 +/-0.15 ns, monolithic 8-BIT pragrammable delay line |
Data Delay Devices Inc |
| 10 |
3D7408S-0.5 |
Delay 0.5 +/-0.25 ns, monolithic 8-BIT pragrammable delay line |
Data Delay Devices Inc |
| 11 |
3D7428-0.25 |
MONOLITHIC 8-BIT PROGRAMMABLE DELAY LINE |
Data Delay Devices Inc |
| 12 |
EN6458 |
P-Channel Power MOSFET, -30V, -0.2A, 10.4 Ohm, Dual MCPH6 |
ON Semiconductor |
| 13 |
FDD12-0512T4 |
12 W DC/DC converter,input voltage 10-36 V, output voltage 5/+/-12 V, output current 1.5A/+/-0.2A |
CHINFA Electronics IND |
| 14 |
FDD12-0512T5 |
12 W DC/DC converter,input voltage 18-72 V, output voltage 5/+/-12 V, output current 1.5A/+/-0.2A |
CHINFA Electronics IND |
| 15 |
FDD15-0512T2 |
15 W DC/DC converter,input voltage 18-36 V, output voltage 5/+/-12 V, output current 2A/+/-0.2A |
CHINFA Electronics IND |
| 16 |
FDD15-0512T3 |
15 W DC/DC converter,input voltage 36-72 V, output voltage 5/+/-12 V, output current 2A/+/-0.2A |
CHINFA Electronics IND |
| 17 |
IRHNM53110SCS |
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.2 package Metal Lid |
International Rectifier |
| 18 |
IRHNM57110 |
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.2 package Metal Lid |
International Rectifier |
| 19 |
IRHNM57110SCS |
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.2 package Metal Lid |
International Rectifier |
| 20 |
IRHNM57214SE |
250V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.2 package Metal Lid |
International Rectifier |
| 21 |
IRHNM593110SCS |
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.2 package |
International Rectifier |
| 22 |
IRHNM597110 |
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.2 package |
International Rectifier |
| 23 |
IRHNM597110SCS |
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.2 package |
International Rectifier |
| 24 |
IRHNMC53110SCS |
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.2 package Ceramic Lid |
International Rectifier |
| 25 |
IRHNMC57110 |
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.2 package Ceramic Lid |
International Rectifier |
| 26 |
K6F8016V3A-RF55 |
55ns; V(cc): -0.2 to +4.0V; 1W; 512K x 16 bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
| 27 |
K6F8016V3A-RF70 |
70ns; V(cc): -0.2 to +4.0V; 1W; 512K x 16 bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
| 28 |
K6F8016V3A-TF55 |
55ns; V(cc): -0.2 to +4.0V; 1W; 512K x 16 bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
| 29 |
K6F8016V3A-TF70 |
70ns; V(cc): -0.2 to +4.0V; 1W; 512K x 16 bit super low power and low voltage full CMOS static RAM |
Samsung Electronic |
| 30 |
L9830 |
V(s): 60V; V(ds): 60V; +-0.2A; 37.5W; monolithic damp dimmer |
SGS Thomson Microelectronics |
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