| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SJ125 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 2 |
78P2241 |
E3/DS3/STS-1 Transceiver |
TDK Semiconductor |
| 3 |
78P2243 |
Triple E3/DS3/STS-1 Transceiver |
TDK Semiconductor |
| 4 |
78P2244 |
Quad E3/DS3/STS-1 Transceiver |
TDK Semiconductor |
| 5 |
78P7200L |
E3/DS3/STS-1 Transceiver |
TDK Semiconductor |
| 6 |
ACT4438 |
ACT4438-1 Transceiver for MIL-STD-1553 / 1760 in a Chipscale Package |
Aeroflex Circuit Technology |
| 7 |
ACT4438-1 |
ACT4438-1 Transceiver for MIL-STD-1553 / 1760 in a Chipscale Package |
Aeroflex Circuit Technology |
| 8 |
AT89C52-12DM_883 |
12MHz; V(cc): -1 to +7V; 15mA; 8-bit microcontroller with 8Kbytes flash |
Atmel |
| 9 |
AT89C52-12LM_883 |
12MHz; V(cc): -1 to +7V; 15mA; 8-bit microcontroller with 8Kbytes flash |
Atmel |
| 10 |
FBR211 |
1 POLE-1 to 2 A (FOR SIGNAL SWITCHING) |
Fujitsu Microelectronics |
| 11 |
FBR211NAD003 |
1 POLE-1 to 2 A (FOR SIGNAL SWITCHING) |
Fujitsu Microelectronics |
| 12 |
FBR211NAD012 |
1 POLE-1 to 2 A (FOR SIGNAL SWITCHING) |
Fujitsu Microelectronics |
| 13 |
FBR211NBD003 |
1 POLE-1 to 2 A (FOR SIGNAL SWITCHING) |
Fujitsu Microelectronics |
| 14 |
FBR211NBD012 |
1 POLE-1 to 2 A (FOR SIGNAL SWITCHING) |
Fujitsu Microelectronics |
| 15 |
FBR211NCD003 |
1 POLE-1 to 2 A (FOR SIGNAL SWITCHING) |
Fujitsu Microelectronics |
| 16 |
FBR211NCD012 |
1 POLE-1 to 2 A (FOR SIGNAL SWITCHING) |
Fujitsu Microelectronics |
| 17 |
FBR211NED003 |
1 POLE-1 to 2 A (FOR SIGNAL SWITCHING) |
Fujitsu Microelectronics |
| 18 |
FBR211NED012 |
1 POLE-1 to 2 A (FOR SIGNAL SWITCHING) |
Fujitsu Microelectronics |
| 19 |
FBR211SAD003 |
1 POLE-1 to 2 A (FOR SIGNAL SWITCHING) |
Fujitsu Microelectronics |
| 20 |
FBR211SAD012 |
1 POLE-1 to 2 A (FOR SIGNAL SWITCHING) |
Fujitsu Microelectronics |
| 21 |
FBR211SBD003 |
1 POLE-1 to 2 A (FOR SIGNAL SWITCHING) |
Fujitsu Microelectronics |
| 22 |
FBR211SBD012 |
1 POLE-1 to 2 A (FOR SIGNAL SWITCHING) |
Fujitsu Microelectronics |
| 23 |
FBR211SCD003 |
1 POLE-1 to 2 A (FOR SIGNAL SWITCHING) |
Fujitsu Microelectronics |
| 24 |
FBR211SCD012 |
1 POLE-1 to 2 A (FOR SIGNAL SWITCHING) |
Fujitsu Microelectronics |
| 25 |
FBR211SED003 |
1 POLE-1 to 2 A (FOR SIGNAL SWITCHING) |
Fujitsu Microelectronics |
| 26 |
FBR211SED012 |
1 POLE-1 to 2 A (FOR SIGNAL SWITCHING) |
Fujitsu Microelectronics |
| 27 |
HM514800AJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 28 |
HM514800AJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 29 |
HM514800ALJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 30 |
HM514800ALJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
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