| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SJ125 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 2 |
2SJ498 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 3 |
BS616UV1010CI |
150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bit |
Brilliance Semiconductor |
| 4 |
KT8592N |
V(dd): -0.5 to +20V; V(in): -0.5 to +0.5V; +-10mA; 500mW; 4 x 4 crosspoint switch with control memory |
Samsung Electronic |
| 5 |
PD110-10MA |
DC/DC converter. Maximum output power 110 W. Output #1: Vnom 5V, Imin 0.0A, Imax 22.0A. |
International Power Sources |
| 6 |
TC4514BP |
V(dd): -05 to +20V; V(in/out): -0.5 to +0.5V; +-10mA; 300mW; 4-bit latch/4-to16 line decoder (output active high option) |
TOSHIBA |
| 7 |
TC4515BP |
V(dd): -05 to +20V; V(in/out): -0.5 to +0.5V; +-10mA; 300mW; 4-bit latch/4-to16 line decoder (output active high option) |
TOSHIBA |
| 8 |
UPC573C |
3-9V; 5-10mA; 2-stage direct coupled tone amplifier with emitter follower output stage |
NEC |
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